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PDF ISL9V5036S3 Data sheet ( Hoja de datos )
| Número de pieza | ISL9V5036S3 | |
| Descripción | EcoSPARKTM 500mJ/ 360V/ N-Channel Ignition IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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September 2002
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
General Description
The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next
generation IGBTs that offer outstanding SCIS capability in the D² -
Pak (TO-263) and TO-220 plastic package. These devices are
intended for use in automotive ignition circuits, specifically as coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49443
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Industry Standard D-Pak package
• SCIS Energy = 500mJ at TJ = 25oC
• Logic Level Gate Drive
Package
JEDEC TO-263AB
D²-Pak
G
E
Symbol
JEDEC TO-220AB
JEDEC TO-262AA
ECG
ECG
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 µHy
At Starting TJ = 150°C, ISCIS = 30A, L = 670 µHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
COLLECTOR
R1
R2
EMITTER
Ratings
390
24
500
300
46
31
±10
250
1.67
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2002 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISl9V5036P3 / ISL9V5036S3 Rev. C1, September 2002
1 page  
Typical Characteristics (Continued)
3000
2500
FREQUENCY = 1 MHz
2000
1500
CIES
1000
CRES
500
COES
0
0
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
Figure 13. Capacitance vs Collector to Emitter
Voltage
8
IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C
7
6
5
VCE = 12V
4
3
2
1 VCE = 6V
0
0 10 20 30 40
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
50
360
ICER = 10mA
358
356
354
352
350
348
346
344
342
340
10
TJ = 175°C
TJ = 25°C
100
1000
RG, SERIES GATE RESISTANCE (kΩ)
Figure 15. Breakdown Voltage vs Series Gate Resistance
TJ = - 40°C
2000 3000
100 0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
10-3
SINGLE PULSE
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-4
10-6
10-5
10-4
10-3
10-2
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
10-1
©2002 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ISL9V5036S3.PDF ] | |
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