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IXDD408PI 데이터시트 PDF




IXYS Corporation에서 제조한 전자 부품 IXDD408PI은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 IXDD408PI 기능
기능 8 Amp Low-Side Ultrafast MOSFET Driver
제조업체 IXYS Corporation
로고 IXYS Corporation 로고


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IXDD408PI 데이터시트, 핀배열, 회로
IXDD408PI / 408SI / 408YI / 408CI
8 Amp Low-Side Ultrafast MOSFET Driver
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes.
• Latch Up Protected
• High Peak Output Current: 8A Peak
• Operates from 4.5V to 25V
• Ability to Disable Output under Faults
• High Capacitive Load
Drive Capability: 2500pF in <15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
Applications
• Driving MOSFETs and IGBTs
• Limiting di/dt under Short Circuit
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
Figure 1 - Functional Diagram
General Description
The IXDD408 is a high speed high current gate driver
specifically designed to drive the largest MOSFETs and
IGBTs to their minimum switching time and maximum
practical frequency limits. The IXDD480 can source and
sink 8A of peak current while producing voltage rise and
fall times of less than 30ns. The input of the driver is
compatible with TTL or CMOS and is fully immune to
latch up over the entire operating range. Designed with
small internal delays, cross conduction/current shoot-
through is virtually eliminated in the IXDD408. Its features
and wide safety margin in operating voltage and power
make the IXDD408 unmatched in performance and value.
The IXDD408 incorporates a unique ability to disable the
output under fault conditions. When a logical low is
forced into the Enable input, both final output stage
MOSFETs (NMOS and PMOS) are turned off. As a
result, the output of the IXDD408 enters a tristate mode
and achieves a Soft Turn-Off of the MOSFET/IGBT when
a short circuit is detected. This helps prevent damage
that could occur to the MOSFET/IGBT if it were to be
switched off abruptly due to a dv/dt over-voltage tran-
sient.
The IXDD408 is available in the standard 8-pin P-DIP (PI),
SOP-8 (SI), 5-pin TO-220 (CI) and in the TO-263 (YI)
surface-mount package.
Copyright © IXYS CORPORATION 2001 Patent Pending
First Release




IXDD408PI pdf, 반도체, 판매, 대치품
IXDD408PI/408SI//408YI/408CI
Typical Performance Characteristics
Fig. 3 RiseTime vs. Supply Voltage
50
Fig. 4
100
Fall Timevs. Supply Voltage
40 80
30 CL=10,000pF
4700 pF
20
2200 pF
10
0
8 10 12 14 16
Supply Voltage(V)
Fig. 5 RiseAndFall Times vs. JunctionTemperature
CL =2500pF, VCC =18V
25
18
20
15
tF
10 tR
5
0
-40
Fig. 7
90
80
-20 0 20 40 60 80 100
Temperature (°C)
Fall Time vs. Load Capacitance
120
8V
70
60
10V
50
40 12V
30 18V
14V 16V
20
10
0
2k 4k 6k 8k 10k
Load Capacitance (pF)
4
60
40 CL=10,000pF
4700 pF
20
2200 pF
0
8
Fig. 6
50
40
30
20
10 12 14 16
Supply Voltage (V)
RiseTime vs. LoadCapacitance
18
8V
10V
12V
14V16V 18V
10
0
2k
Fig. 8
3.2
4k 6k 8k
Load Capacitance (pF)
Max / Min Input vs. Junction Temperature
CL=2500pF VCC = 18V
10k
3.0
2.8 MinimumInput High
2.6
2.4
2.2
MaximumInput Low
2.0
1.8
1.6
-60 -40 -20 0 20 40 60
Temperature (oC)
80 100

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IXDD408PI 전자부품, 판매, 대치품
IXDD408PI/408SI/408YI/408CI
Fig. 21
14
Enable Threshold vs. Supply Voltage
12
10
8
6
4
2
0
4 6 8 10 12 14 16 18 20 22 24 26
Supply Voltage (V)
Fig. 23
3.0
Low-State Output Resistance
vs. Supply Voltage
2.0
1.0
0.0
8
10
15 20
Supply Voltage (V)
25
Fig. 22
3
High State Output Resistance
vs. Supply Voltage
2
1
0
5
Fig. 24
0
-2
-4
-6
-8
-10
-12
-14
-16
5
10 15 20
Supply Voltage (V)
Vcc vs. P Channel Output Current
CL=15nF
10 15 20 25
Vcc
25
30
Fig. 25
10
Vcc vs. NChannel Output Current
CL=15nF
Figure 26 - Typical Application Short Circuit di/dt Limit
8
6
4
2
0
5 10 15 20 25 30
Vcc
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
IXDD408PI

8 Amp Low-Side Ultrafast MOSFET Driver

IXYS Corporation
IXYS Corporation

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