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IXDD414PI 데이터시트 PDF




ETC에서 제조한 전자 부품 IXDD414PI은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 IXDD414PI 기능
기능 14 Amp Low-Side Ultrafast MOSFET Driver
제조업체 ETC
로고 ETC 로고


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IXDD414PI 데이터시트, 핀배열, 회로
IXDD414PI / 414YI / 414CI
14 Amp Low-Side Ultrafast MOSFET Driver
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes.
• Latch-Up Protected
• High Peak Output Current: 14A Peak
• Wide Operating Range: 4.5V to 25V
• Ability to Disable Output under Faults
• High Capacitive Load
Drive Capability: 15nF in <30ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
Applications
• Driving MOSFETs and IGBTs
• Limiting di/dt under Short Circuit
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
General Description
The IXDD414 is a high speed high current gate driver
specifically designed to drive the largest MOSFETs and
IGBTs to their minimum switching time and maximum
practical frequency limits. The IXDD414 can source and
sink 14A of peak current while producing voltage rise and
fall times of less than 30ns. The input of the driver is
compatible with TTL or CMOS and is fully immune to
latch up over the entire operating range. Designed with
small internal delays, cross conduction/current shoot-
through is virtually eliminated in the IXDD414. Its features
and wide safety margin in operating voltage and power
make the IXDD414 unmatched in performance and value.
The IXDD414 incorporates a unique ability to disable the
output under fault conditions. When a logical low is
forced into the Enable input, both final output stage
MOSFETs (NMOS and PMOS) are turned off. As a
result, the output of the IXDD414 enters a tristate mode
and achieves a Soft Turn-Off of the MOSFET/IGBT when
a short circuit is detected. This helps prevent damage
that could occur to the MOSFET/IGBT if it were to be
switched off abruptly due to a dv/dt over-voltage tran-
sient.
The IXDD414 is available in the standard 8-pin P-DIP (PI),
5-pin TO-220 (CI) and in the TO-263 (YI) surface-mount
package.
Figure 1 - Functional Diagram
200 k
Copyright © IXYS CORPORATION 2001 Patent Pending
First Release




IXDD414PI pdf, 반도체, 판매, 대치품
IXDD414PI/414YI/414CI
Typical Performance Characteristics
Fig. 3
40
RiseTimevs. SupplyVoltage
Fig. 4
40
Fall Timevs. Supply Voltage
30
CL=15,000 pF
20
7,500 pF
10 3,600pF
30
20 CL=15,000pF
7,500 pF
10 3,600pF
0
8 10 12 14 16
Supply Voltage (V)
Fig. 5 Rise AndFall Times vs. JunctionTemperature
CL =15 nF, Vcc =18V
40
18
35
30 tR
25
tF
20
15
10
5
0
-40 -20 0 20 40 60 80 100
Temperature (°C)
Fig. 7 Fall Time vs. LoadCapacitance
40
120
14V 12V 8V
30 10V
16V18V
20
10
0
0k 5k 10k 15k 20k
Load Capacitance (pF)
4
0
8 10 12 14 16 18
Supply Voltage (V)
Fig. 6 RiseTime vs. LoadCapacitance
50
8V
40 10V
12V
30 18V
14V 16V
20
10
0
0k 5k 10k 15k
Load Capacitance (pF)
Fig. 8 Max / Min Input vs. Junction Temperature
VCC=18V CL=15nF
3.2
20k
3.0
2.8 MinimumInput High
2.6
2.4
2.2
MaximumInput Low
2.0
1.8
1.6
-60 -40 -20 0 20 40 60
Temperature (oC)
80 100

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IXDD414PI 전자부품, 판매, 대치품
IXDD414PI/414YI/414CI
Fig. 21 Enable Threshold vs. Supply Voltage
14
12
10
8
6
4
2
0
8 10 12 14 16 18 20 22 24 26
Supply Voltage (V)
Fig. 23
1.0
Low-State Output Resistance
vs. Supply Voltage
0.8
0.6
0.4
0.2
0.0
8
10
15 20
Supply Voltage (V)
Fig. 25
24
22
20
18
16
14
12
10
8
6
4
2
0
8
Vcc vs. NChannel Output Current
CL=.1uF VIN=0-5V@1kHz
10 15 20
Vcc
25
25
Fig. 22
1.0
High State Output Resistance
vs. Supply Voltage
0.8
0.6
0.4
0.2
0.0
8
10
15 20
Supply Voltage (V)
25
Fig. 24
0
VCC vs. P Channel Output Current
CL=.1uF VIN=0-5V@1kHz
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
8 10 15 20
Vcc
25
Figure 26 - Typical Application Short Circuit di/dt Limit
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
IXDD414PI

14 Amp Low-Side Ultrafast MOSFET Driver

ETC
ETC
IXDD414PI

14 Amp Low-Side Ultrafast MOSFET Driver

IXYS
IXYS

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