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Número de pieza | IXFN120N20 | |
Descripción | HiPer FET Power MOSFETs | |
Fabricantes | ETC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXFN120N20 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! HiPerFETTM
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFN 120N20
VDSS =
ID25 =
=RDS(on)
200 V
120 A
17 mW
trr £ 250 ns
Preliminary data sheet
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
I
AR
EAR
EAS
dv/dt
P
D
TJ
TJM
T
stg
TL
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
200 V
200 V
±20 V
±30 V
120 A
480 A
120 A
64 mJ
3J
5 V/ns
600 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
- °C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Symbol
V
DSS
V
GS(th)
IGSS
I
DSS
RDS(on)
Test Conditions
V = 0 V, I = 3mA
GS D
V = V , I = 8mA
DS GS D
VGS = ±20 V, VDS = 0
V =V
DS DSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
200 V
2 4V
±200 nA
T=
J
25°C
TJ = 125°C
100 mA
2 mA
17 mW
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
96538C (7/99)
1-2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet IXFN120N20.PDF ] |
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