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Número de pieza | IXFN180N10 | |
Descripción | HiPerFET Power MOSFET Single MOSFET Die | |
Fabricantes | ETC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXFN180N10 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! HiPerFETTM
Power MOSFET
Single MOSFET Die
Preliminary data sheet
IXFN 180N10
V
DSS
ID25
RDS(on)
= 100 V
= 180 A
= 8 mΩ
t
rr
≤
250
ns
Symbol Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IL(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
VISOL
M
d
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C,
R
GS
=
1MΩ
Continuous
Transient
TC = 25°C
Terminal (current limit)
TC = 25°C; Note 1
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
100 V
100 V
±20 V
±30 V
180 A
100 A
720 A
180 A
60 mJ
3J
5 V/ns
600 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Symbol Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
VDSS
VGS= 0 V, ID = 3mA
VGS(th) VDS = VGS, ID = 8mA
IGSS VGS= ±20V, VGS = 0V
IDSS
VDS= VDSS
VGS= 0 V
RDS(on)
VGS = 10V, ID = 0.5 • ID25
Note 2
Characteristic Values
Min. Typ. Max.
100 V
2 4V
±100 nA
TJ = 25°C
TJ = 125°C
100 µA
2 mA
8 mΩ
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
© 1999 IXYS All rights reserved
98546B (8/99)
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet IXFN180N10.PDF ] |
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