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J108 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 J108은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 J108 기능
기능 N-Channel Switch
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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J108 데이터시트, 핀배열, 회로
J108/J109/J110/MMBFJ108
N-Channel Switch
• This device is designed for digital switching
applications where very low on resistance is
mandatory.
• Sourced from Process 58.
3
1 TO-92
1. Drain 2. Source 3. Gate
2
1 SuperSOT-3
Marking: I8
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ, Tstg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
25
-25
10
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS
IGSS
VGS(off)
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
IG = -10µA, VDS = 0
VGS = -15V, VDS = 0
VGS = -15V, VDS = 0, TA = 100°C
VDS = 15V, ID = 10nA
108
109
110
On Characteristics
IDSS
Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0
108
109
110
rDS(on)
Drain-Source On Resistance
VDS 0.1V, VGS = 0
108
109
110
Small Signal Characteristics
Cdg(on)
Csg(off)
Drain Gate & Source Gate On
Capacitance
Cdg(on)
Drain-Gate Off Capacitance
Csg(off)
Source-Gate Off Capacitance
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
VDS = 0, VGS = 0, f = 1.0MHz
VDS = 0, VGS = -10, f = 1.0MHz
VDS = 0, VGS = -10, f = 1.0MHz
Min. Max. Units
-25
-3.0
-200
-3.0 -10
-2.0 -6.0
-0.5 -4.0
V
nA
nA
V
V
V
80 mA
40 mA
10 mA
8.0
12
18
85 pF
15 pF
15 pF
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002




J108 pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
Switching Turn-On Time vs
Gate-Source Cutoff Voltage
10
TA = 25°C
8 VDD = 1.5V
V GS(off)= - 12V
6
I D = 30 mA
4
I D = 10 mA
2
0
0 -2 -4 -6 -8 -10
VGGSS((ooffff)) - GATE-SOURCE CUTOFF VOLTAGE (V)
Figure 7. Switching Turn-On Time vs
Gate-Source Cutoff Voltage
Switching Turn-On Time
vs Drain Current
50
40 V GS(off) = - 8.5V
30
20
TA = 25°C
VGS(off) = - 5.5V
V GS(off) = - 3.5V
10 VDD = 1.5V
V GS(off)= - 12V
0
0 5 10 15 20
I D - DRAIN CURRENT (mA)
25
Figure 8. Switching Turn-On Time vs Drain Current
On Resistance vs Drain Current
100
50 VGS = 0
V GS(off)= - 3.0V
125°C
10
125°C
5
25°C
25°C
- 55°C
V GS(off)= - 5.0V
1
1 10 100
I D - DRAIN CURRENT (mA)
Figure 9. On Resistance vs Drain Current
Output Conductance
vs Drain Current
100
V DG = 5.0V
10V
VGS(off) 5.0V
15V
20V
- 4.0V
10V
10 15V
5.0V
10V
20V 15V
- 2.0V
20V
T A = 25°C
1
0.1
- 1.0V
f = 1.0 kHz
1 10
I D - DRAIN CURRENT (mA)
Figure 10. Output Conductance vs Drain Current
Transconductance
vs Drain Current
100
TA = 25°C
V DG = 10V
f = 1.0 kHz
TA = - 55°C
T A = 25°C
TA = 125°C
10
1
0.1
V GS(off) = - 1.0V
VGS(off) = - 3.0V
V GS(off) = - 5.0V
1
I D - DRAIN CURRENT (mA)
10
Figure 11. Transconductance vs Drain Current
700
600
500
400 S uperS O T-3
T O -92
300
200
100
0
0 25 50 75 100
o
TEMPERATURE ( C)
125
150
Figure 12. Power Dissipation vs Ambient Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002

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J108 전자부품, 판매, 대치품
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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E2CMOS™
HiSeC™
EnSigna™
I2C™
Across the board. Around the world.™
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Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
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MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Product Status
Formative or In
Design
First Production
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1

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