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J110 데이터시트 PDF




Calogic LLC에서 제조한 전자 부품 J110은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 J110 자료 제공

부품번호 J110 기능
기능 N-Channel JFET Switch
제조업체 Calogic LLC
로고 Calogic  LLC 로고


J110 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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J110 데이터시트, 핀배열, 회로
CORPORATION
N-Channel JFET Switch
J108 – J110 / SST108 – SST110
FEATURES
Low Cost
Automated Insertion Package
Low Insertion Loss
•• No Offset or Error Voltages Generated by Closed Switch
Purely Resistive
High Isolation Resistance from Driver
Fast Switching
•• Low Noise
PIN CONFIGURATION
TO-92
D SG
5018
SOT-23
G
D
S
PRODUCT MARKING (SOT-23)
SST108
I08
SST109
I09
SST110
I10
APPLICATIONS
Analog Switches
Choppers
Commutators
•• Low-Noise Audio Amplifiers
A(TBAS=O2L5UoCTEunMleAsXsIMotUheMrwRisAeTsINpeGcSified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC
Operating Temperature Range . . . . . . . . . . . -55oC to +135oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package
J108-110 Plastic TO-92
XJ108-110 Sorted Chips in Carriers
SST109-110 Plastic SOT-23
Temperature Range
-55oC to +135oC
-55oC to +135oC
-55oC to +135oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
IGSS
VGS(off)
BVGSS
IDSS
ID(off)
rDS(on)
Cdg(off)
Csg(off)
Cdg(on)
+ Csg(on)
td(on)
tr
td(off)
tf
PARAMETER
Gate Reverse Current (Note 1)
Gate-Source Cutoff Voltage
Gate-Source Breakdown Voltage
Drain Saturation Current (Note 2)
Drain Cutoff Current (Note 1)
Drain-Source ON Resistance
Drain-Gate OFF Capacitance
Source-Gate OFF Capacitance
Drain-Gate Plus Source-Gate
ON Capacitance
Turn On Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
108 109 110
UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
-3 -3 -3 nA
-3 -10 -2
-25 -25
-6 -0.5
-25
-4
V
80 40 10
mA
3 3 3 nA
8 12 18
15 15 15
15 15 15 pF
85 85 85
444
111
6 6 6 ns
30 30 30
TEST CONDITIONS
VDS = 0V, VGS = -15V
VDS = 5V, ID = 1µA
VDS = 0V, IG = -1µA
VDS = 15V, VGS = 0V
VDS = 5V, VGS = -10V
VDS 0.1V, VGS = 0V
VDS = 0,
VGS = -10V
(Note 3)
f = 1MHz
VDS = VGS = 0
(Note 3)
Switching Time Test
Conditions (Note 3)
J107 J109
VDD 1.5V 1.5V
VGS(off) -12V -7V
RL 150150
J110
1.5V
-5V
150
NOTES: 1. Approximately doubles for every 10oC increase in TA.
2. Pulse test duration = 300µs; duty cycle 3%.
3. For design reference only, not 100% tested.





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구매 문의
일반 IC 문의 : 샘플 및 소량 구매
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