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부품번호 | J202 기능 |
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기능 | N-Channel JFET General Purpose Amplifier | ||
제조업체 | Calogic LLC | ||
로고 | |||
전체 1 페이지수
N-Channel JFET
General Purpose Amplifier
CORPORATION
J201 – J204 / SST201 – SST204
FEATURES
High Input Impedance
•• Low IGSS
PIN CONFIGURATION
TO-92
D SG
5010
SOT-23
G
D
S
PRODUCT MARKING (SOT-23)
SST201
A01
SST202
A02
SST203
A03
SST204
A04
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC
Operating Temperature Range . . . . . . . . . . . -55oC to +135oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package
Temperature Range
J201-204 Plastic TO-92
SST201-204 Plastic SOT-23
-55oC to +135oC
-55oC to +135oC
For Sorted Chips in Carriers see 2N4338 series.
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
201 202 203 204
UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
IGSS
Gate Reverse Current
(Note 1)
-100
-100
-100
-100 pA VDS = 0, VGS = -20V
VGS(off)
BVGSS
Gate-Source Cutoff
Voltage
Gate-Source Breakdown
Voltage
-0.3
-40
-1.5 -0.8
-40
-4.0 -2.0
-40
-10.0 -0.3
-25
-2.0 VDS = 20V, ID = 10nA
V
VDS = 0, IG = -1µA
IDSS
Saturation Drain Current
(Note 2)
0.2
1.0 0.9
4.5 4.0
20 0.2 1.2 3.0 mA VDS = 20V, VGS = 0
IG Gate Current (Note 1)
-10
-10
-10
-10 pA VDG = 20V, ID = IDSS(min)
gfs
Common-Source Forward
Transconductance (Note 2)
500
gos
Common-Source Output
Conductance
1
Ciss
Common-Source Input
Capacitance
4
Crss
Common-Source Reverse
Transfer Capacitance
1
1,000
3.5
4
1
1,500
10
4
1
500 1,500
2.5
4
1
µs f = 1kHz
VDS = 20V,
VGS = 0
pF
f = 1MHz
(Note 3)
en
Equivalent Short-Circuit
Input Noise Voltage
5
5
5
10
nV VDS = 10V, f = 1kHz
√Hz VGS = 0 (Note 3)
NOTES: 1. Approximately doubles for every 10oC increase in TA.
2. Pulse test duration = 2ms.
3. For design reference only, not 100% tested.
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구 성 | 총 1 페이지수 | ||
다운로드 | [ J202.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
J201 | N-Channel JFETs | Vishay |
J201 | N-Channel General Purpose Amplifier | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |