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Datasheet J212 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | J212 | N-channel field-effect transistors DISCRETE SEMICONDUCTORS
DATA SHEET
J210; J211; J212 N-channel field-effect transistors
Product specification File under Discrete Semiconductors, SC07 1997 Dec 01
Philips Semiconductors
Product specification
N-channel field-effect transistors
FEATURES • High speed switching • Interchangea | NXP Semiconductors | transistor |
2 | J212 | N-Channel RF Amplifier J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
J210 J211 J212
MMBFJ210 MMBFJ211 MMBFJ212
G
S G S
TO-92
D
SOT-23
Mark: 62V / 62W / 62X
D
NOTE: Source & Drain are interchangeable
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is | Fairchild Semiconductor | amplifier |
3 | J212 | N-Channel JFET N-Channel JFET
CORPORATION
J210 – J212 / SSTJ210 – SSTJ212
FEATURES DESCRIPTION The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage, typically under 2 pA, low noise, under 10 nano volts pe | Calogic LLC | data |
4 | J212 | LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER J210, J211, J212
Linear Integrated Systems
LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER
TO-92
FEATURES
HIGH GAIN gfs = 7000µmho MINIMUM (J211, J212) HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Ga | Linear Integrated Systems | amplifier |
5 | J212 | Amplifier J212 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J212
The J212 is a n-channel JFET General Purpose amplifier with low noise and low leakage. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES DIRECT REPLAC | Micross | amplifier |
J21 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | J210 | N-channel field-effect transistors DISCRETE SEMICONDUCTORS
DATA SHEET
J210; J211; J212 N-channel field-effect transistors
Product specification File under Discrete Semiconductors, SC07 1997 Dec 01
Philips Semiconductors
Product specification
N-channel field-effect transistors
FEATURES • High speed switching • Interchangea NXP Semiconductors transistor | | |
2 | J210 | N-Channel RF Amplifier J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
J210 J211 J212
MMBFJ210 MMBFJ211 MMBFJ212
G
S G S
TO-92
D
SOT-23
Mark: 62V / 62W / 62X
D
NOTE: Source & Drain are interchangeable
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is Fairchild Semiconductor amplifier | | |
3 | J210 | N-Channel JFET N-Channel JFET
CORPORATION
J210 – J212 / SSTJ210 – SSTJ212
FEATURES DESCRIPTION The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage, typically under 2 pA, low noise, under 10 nano volts pe Calogic LLC data | | |
4 | J210 | LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER J210, J211, J212
Linear Integrated Systems
LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER
TO-92
FEATURES
HIGH GAIN gfs = 7000µmho MINIMUM (J211, J212) HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Ga Linear Integrated Systems amplifier | | |
5 | J210 | Amplifier J210 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J210
The J210 is a n-channel JFET General Purpose amplifier with low noise and low leakage. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES DIRECT REPLAC Micross amplifier | | |
6 | J210 | N-Channel JFETs J/SSTJ210 Series
Vishay Siliconix
N-Channel JFETs
J210 J211 J212
PRODUCT SUMMARY
Part Number
J210 J/SSTJ211 J/SSTJ212
SSTJ211 SSTJ212
VGS(off) (V)
–1 to –3 –2.5 to –4.5 –4 to –6
V(BR)GSS Min (V)
–25 –25 –25
gfs Min (mS)
4 6 7
IDSS Min (mA)
2 7 15
FEATURES
D Excellent High Fr Vishay data | | |
7 | J210 | TRANS JFET N-CH 3TO-92 New Jersey Semiconductor data | |
Esta página es del resultado de búsqueda del J212. Si pulsa el resultado de búsqueda de J212 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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