Datasheet.kr   

JAN2004J 데이터시트 PDF




Microsemi Corporation에서 제조한 전자 부품 JAN2004J은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 JAN2004J 자료 제공

부품번호 JAN2004J 기능
기능 HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
제조업체 Microsemi Corporation
로고 Microsemi Corporation 로고


JAN2004J 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 7 페이지수

미리보기를 사용할 수 없습니다

JAN2004J 데이터시트, 핀배열, 회로
SG2000 SERIES
HIGH VOLTAGE MEDIUM
CURRENT DRIVER ARRAYS
DESCRIPTION
The SG2000 series integrates seven NPN Darlington pairs with
internal suppression diodes to drive lamps, relays, and solenoids in
many military, aerospace, and industrial applications that require
severe environments. All units feature open collector outputs with
greater than 50V breakdown voltages combined with 500mA
current carrying capabilities. Five different input configurations
provide optimized designs for interfacing with DTL, TTL, PMOS, or
CMOS drive signals. These devices are designed to operate from
-55°C to 125°C ambient temperature in a 16 pin dual in line ceramic
(J) package and 20 pin Leadless Chip Carrier (LCC). The plastic
dual in–line (N) is designed to operate over the commercial
temperature range of 0°C to 70°C.
FEATURES
Seven npn Darlington pairs
-55°C to 125°C ambient operating temperature range
Collector currents to 600mA
Output voltages from 50V to 95V
Internal clamping diodes for inductive loads
DTL, TTL, PMOS, or CMOS compatible inputs
Hermetic ceramic package
HIGH RELIABILITY FEATURES
Available to MIL-STD-883 and DESC SMD
MIL-M38510/14101BEA - JAN2001J
MIL-M38510/14102BEA - JAN2002J
MIL-M38510/14103BEA - JAN2003J
MIL-M38510/14104BEA - JAN2004J
Radiation data available
LMI level "S" processing available
PARTIAL SCHEMATICS
4/90 Rev 1.3 6/97
Copyright © 1997
LINFINITY Microelectronics Inc.
1 11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570




JAN2004J pdf, 반도체, 판매, 대치품
ELECTRICAL CHARTACTERISTICS (continued)
SG2011 thru SG2015
Parameter
Applicable
Devices
Temp.
Test Conditions
Output Leakage Current (ICEX)
Collector - Emitter (VCE(SAT))
Input Current (IIN(ON))
(IIN(OFF))
Input Voltage (VIN(ON))
D-C Forward Current
Transfer Ratio (hFE)
Input Capacitance (CIN) (Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (IR)
Clamp Diode Forward Voltage (V )
F
All
SG2012
SG2014
All
SG2012
SG2013
SG2014
SG2015
All
SG2012
SG2013
SG2014
SG2015
SG2011
All
All
All
All
All
VCE = 50V
V = 50V, V = 6V
CE IN
VCE = 50V, VIN = 1V
TA = TMIN IC = 500mA, IB = 1100µA
T =T
A MIN
I
C
=
350mA,
I
B
=
850µA
TA = TMIN IC = 200mA, IB = 550µA
TA = 25°C IC = 500mA, IB = 600µA
T = 25°C
A
I
C
=
350mA,
I
B
=
500µA
TA = 25°C IC = 200mA, IB = 350µA
TA = TMAX IC = 500mA, IB = 600µA
T =T
A MAX
I
C
=
350mA,
I
B
=
500µA
TA = TMAX IC = 200mA, IB = 350µA
VIN = 17V
V = 3.85V
IN
VIN = 5V
VIN = 12V
VIN = 3V
TA = TMAX IC = 500µA
TA = TMIN VCE = 2V, IC = 500mA
TA = TMAX VCE = 2V, IC = 500mA
TA = TMIN VCE = 2V, IC = 250mA
TA = TMIN VCE = 2V, IC = 300mA
TA = TMIN VCE = 2V, IC = 500mA
TA = TMAX VCE = 2V, IC = 250mA
TA = TMAX VCE = 2V, IC = 300mA
TA = TMAX VCE = 2V, IC = 500mA
TA = TMIN VCE = 2V, IC = 275mA
TA = TMIN VCE = 2V, IC = 350mA
TA = TMIN VCE = 2V, IC = 500mA
TA = TMAX VCE = 2V, IC = 275mA
TA = TMAX VCE = 2V, IC = 350mA
TA = TMAX VCE = 2V, IC = 500mA
TA = TMIN VCE = 2V, IC = 350mA
TA = TMIN VCE = 2V, IC = 500mA
TA = TMAX VCE = 2V, IC = 350mA
TA = TMAX VCE = 2V, IC = 500mA
TA = TMIN VCE = 2V, IC = 500mA
TA = 25°C VCE = 2V, IC = 500mA
TA = 25°C
T = 25°C 0.5 E to 0.5 E
A IN OUT
TA = 25°C 0.5 EIN to 0.5 EOUT
VR = 50V
I = 350mA
F
IF = 500mA
Note 3. These parameters, although guaranteed, are not tested in production.
SG2000 SERIES
Limits
Units
Min. Typ. Max.
100 µA
500 µA
500 µA
1.8 2.1 V
1.6 1.8 V
1.3 1.5 V
1.7 1.9 V
1.25 1.6 V
1.1 1.3 V
1.8 2.1 V
1.6 1.8 V
1.3 1.5 V
480 850 1300 µA
650 930 1350 µA
240 350 500 µA
650 1000 1450 µA
1180 1500 2400 µA
25 50
µA
23.5 V
17 V
3.6 V
3.9 V
6.0 V
2.7 V
3.0 V
3.5 V
10 V
12 V
17 V
7.0 V
8.0 V
9.5 V
3.0 V
3.5 V
2.4 V
2.6 V
450
900
15 25 pF
250 1000 ns
250 1000 ns
50 µA
1.7 2.0 V
2.5 V
4/90 Rev 1.3 6/97
Copyright © 1997
LINFINITY Microelectronics Inc.
4 11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570

4페이지










JAN2004J 전자부품, 판매, 대치품
SG2000 SERIES
CONNECTION DIAGRAMS & ORDERING INFORMATION (See Notes Below)
Package
Ambient
Part No. (Note 3) Temperature Range
Connection Diagram
16-PIN CERAMIC DIP
J - PACKAGE
SG2XXXJ/883B
SG2023J/DESC
JAN2001J
JAN2002J
JAN2003J
JAN2004J
SG2XXXJ
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
16-PIN PLASTIC DIP
N - PACKAGE
SG2003N
SG2023N
0°C to 70°C
0°C to 70°C
20-PIN CERAMIC
LEADLESS CHIP CARRIER
L- PACKAGE
SG2XXXL/883B -55°C to 125°C
SG2XXXL
-55°C to 125°C
3 2 1 20 19
4 18
5 17
6 16
7 15
8 14
9 10 11 12 13
Note 1. Contact factory for JAN and DESC product availability.
2. All parts are viewed from the top.
3. See selection guide for specific device types.
4/90 Rev 1.3 6/97
Copyright © 1997
7
LINFINITY Microelectronics Inc.
11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570

7페이지


구       성 총 7 페이지수
다운로드[ JAN2004J.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
JAN2004J

HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS

Microsemi Corporation
Microsemi Corporation

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵