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PDF ILCT6 Data sheet ( Hoja de datos )
| Número de pieza | ILCT6 | |
| Descripción | DUAL PHOTOTRANSISTOR OPTOCOUPLER | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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ILCT6
DUAL PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• Current Transfer Ratio, 50% Typical
• Leakage Current, 1 nA Typ.
• Two Isolated Channels Per Package
• Direct Replacement for MCT6
• Underwriters Lab File #E52744
•
V
DE
VDE 0884 Available with Option1
DESCRIPTION
The ILCT6 is a two channel opto isolator for high
density applications. Each channel consists of an
optically coupled pair with a gallium arsenide infra-
red LED and a silicon NPN phototransistor. Signal
information, including a DC level, can be transmit-
ted by the device while maintaining a high degree
of electrical isolation between input and output.
The ILCT6 is especially designed for driving
medium-speed logic, where it may be used to elimi-
nate troublesome ground loop and noise problems.
It can also be used to replace relays and transform-
ers in many digital interface applications, as well as
analog applications such as CRT modulation.
Maximum Ratings
Emitter (each channel)
Rated Forward Current, DC...........................60 mA
Peak Forward Current, DC
(1 µs pulse, 300 pps)......................................3 A
Power Dissipation at 25°C Ambient ...........100 mW
Derate Linearly from 25°C......................1.3 mW/°C
Detector (each channel)
Collector Current ...........................................30 mA
Collector-Emitter Breakdown Voltage...............30 V
Power Dissipation at 25°C Ambient ...........150 mW
Derate Linearly from 25°C.........................2 mW/°C
Package
Isolation Test Voltage......................... 5300 VACRMS
Isolation Resistance
VIO=500 V, TA=25°C ............................... ≥1012 Ω
VIO=500 V, TA=100°C ............................. ≥1011 Ω
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Total Package Dissipation
at 25°C Ambient. ...................................400 mW
Derate Linearly from 25°C....................5.33 mW/°C
Storage Temperature ...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Lead Soldering Time at 260°C ................... 10 sec.
Dimensions in inches (mm)
43
.268 (6.81)
.255 (6.48)
Pin One I.D.
21
Anode 1
Cathode 2
8 Emitter
7 Collector
56 78
.390 (9.91)
.379 (9.63)
Cathode 3
Anode 4
.045 (1.14) .150 (3.81)
.030 (.76) .130 (3.30)
6 Collector
5 Emitter
.305 Typ.
(7.75) Typ.
4° Typ.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
.100 (2.54) Typ.
10° Typ.
3°–9°
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
Electrical Characteristics (TA=25°C)
Sym-
bol
Min.
Emitter
Forward Voltage
Reverse Current
Junction
Capacitance
VF
IR
CJ
Detector
Breakdown Voltage,
Collector-Emitter
Emitter-Collector
Leakage Current,
Collector -Emitter
BVCEO
BVECO
ICEO
30
7.0
Capacitance
Collector-Emitter
Package
CCE
DC Current
Transfer Ratio
CTR 20
Saturation Voltage,
Collector-Emitter
VCEsat
Isolation
Capacitance
CISOL
Capacitance
between Channels
Typ.
1.25
0.1
25
65
10
1.0
8.0
50
0.5
0.4
Max. Unit
1.50 V
10 µA
pF
V
V
100 nA
pF
%
0.40 V
pF
pF
Condition
IF=20 mA
VR=3.0 V
VF=0 V
IC=10 µA
IE=10 µA
VCE=10 V
VCE=0 V
IF=10 mA,
VCE=10 V
IC=2.0 mA,
IF=16 mA
f=1.0 MHz
f=1.0 MHz
Bandwidth
Switching Times,
Output Transistor
ton, toff
150
3.0
KHz IC=2.0 mA,
VCC=10 V,
RL= 100 Ω
µs IC=2 mA,
RE=100 Ω,
VCE=10 V
5–1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ILCT6.PDF ] | |
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