ILQ615-3 Datasheet PDF - Siemens Semiconductor Group
| Part Number | ILQ615-3 | |
| Description | PHOTOTRANSISTOR OPTOCOUPLER | |
| Manufacturers | Siemens Semiconductor Group | |
| Logo |  |
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FEATURES
• Identical Channel to Channel Footprint
• Current Transfer Ratio (CTR) Range at
IF=10 mA
ILD/Q615-1: 40 – 80% Min.
ILD/Q615-2: 63 – 125% Min.
ILD/Q615-3: 100 – 200% Min.
ILD/Q615-4: 160 – 320% Min.
• Guaranteed CTR at IF=1 mA
ILD/Q615-1: 13% Min.
ILD/Q615-2: 22% Min.
ILD/Q615-3: 34% Min.
ILD/Q615-4: 56% Min.
• High Collector-Emitter Voltage BVCEO=70 V
• Dual and Quad Packages Feature:
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• Isolation Test Voltage from Double Molded
Package, 5300 VACRMS
• UL Approval #E52744
• VDE #0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Reverse Voltage ................................................ 6 V
Forward Current ........................................... 60 mA
Surge Current .................................................1.5 A
Power Dissipation ...................................... 100 mW
Derate Linearly from 25°C ................... 1.33 mW/°C
Detector
Collector-Emitter Reverse Voltage .................. 70 V
Emitter-Collector Reverse Voltage .................... 7 V
Collector Current .......................................... 50 mA
Collector Current (t <1 ms) .........................100 mA
Power Dissipation ...................................... 150 mW
Derate Linearly from 25°C........................ 2 mW/°C
Package
Storage Temperature................... –55°C to +150°C
Operating Temperature ............... –55°C to +100°C
Junction Temperature.................................... 100°C
Soldering Temperature
(2 mm distance from case bottom) ........... 260°C
Package Power Dissipation, ILD615.......... 400 mW
Derate Linearly from 25°C.................. 5.33 mW/°C
Package Power Dissipation, ILQ615 ......... 500 mW
Derate Linearly from 25°C................. 6.67 mW/°C
Isolation Test Voltage (t=1 sec.)........ 5300 VACRMS
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Isolation Resistance
VIO=500 V, TA=25°C ............................... ≥1012 Ω
VIO=500 V, TA=100°C ............................. ≥1011 Ω
DUAL CHANNEL ILD615
QUAD CHANNEL ILQ615
PHOTOTRANSISTOR OPTOCOUPLER
Dimensions in inches (mm)
4 3 2 1 Pin One I.D.
.268 (6.81)
.255 (6.48)
Anode 1
Cathode 2
56 78
.390 (9.91)
.379 (9.63)
Anode 3
Cathode 4
.045 (1.14) .150 (3.81)
.030 (.76) .130 (3.30)
8 Collector
7 Emitter
6 Collector
5 Emitter
.305 Typ.
(7.75) Typ.
T4y°p.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
.100 (2.54) Typ.
10° Typ.
.135 (3.43)
.115 (2.92)
3°–9°
.012 (.30)
.008 (.20)
.268 (6.81)
.255 (6.48)
.790 (20.07)
.779 (19.77 )
.045 (1.14)
.030 (.76)
4°
Typ.
.022 (.56)
.018 (.46)
.100 (2.54) Typ.
Pin Anode 1
One
I.D. Cathode 2
Anode 3
Cathode 4
Anode 5
Cathode 6
Anode 7
Cathode 8
16 Collector
15 Emitter
14 Collector
13 Emitter
12 Collector
11 Emitter
10 Collector
9 Emitter
.150 (3.81)
.130 (3.30)
.305 Typ.
(7.75) Typ.
.040 (1.02)
.030 (.76 )
10° Typ.
.135 (3.43)
.115 (2.92)
3°–9°
.012 (.30)
.008 (.20)
DESCRIPTION
The ILD/Q615 are multi-channel phototransistor optocouplers that use GaAs
IRLED emitters and high gain NPN phototransistors. These devices are con-
structed using over/under leadframe optical coupling and double molded
insulation technology resulting a Withstand Test Voltage of 7500 VACPEAK
and a Working Voltage of 1700 VACRMS.
The binned min./max. and linear CTR characteristics combined with the
TRIOS (TRansparent IOn Shield) field-effect process make these devices
well suited for DC or AC voltage detection. Eliminating the phototransistor
base connection provides added electrical noise immunity from the tran-
sients found in many industrial control environments.
Because of guaranteed maximum non-saturated and saturated switching
characteristics, the ILD/Q615 can be used in medium speed data I/O and
control systems. The binned min./max. CTR specification allow easy worst
case interface calculations for both level detection and switching applica-
tions. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at
an IF=1 mA.
See Appnote 45, “How to Use Optocoupler Normalized Curves.”
5–1
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Figure 14. Normalization factor for non-saturated
and saturated CTR TA=85°C versus if
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25°C
1.5 CTRce(sat) Vce = 0.4V
NCTRce
1.0
0.5
0.0
.1
NCTRce(sat)
TTaa==110000°°CC
1 10
IF - LED Current - mA
100
Figure 15. Collector-emitter current versus temperature
and LED current
35
30
25 50°C
20
15 25°C
70°C
10 85°C
5
0
0 10 20 30 40 50 60
IF - LED Current - mA
Figure 16. Collector-emitter leakage versus
temperature
105
104
103
102
101 Vce = 10V
100 TYPICAL
10-1
10-2
-20
0 20 40 60 80 100
Ta - Ambient Temperature - °C
Figure 17. -1 Propagation delay versus collector load re-
sistor
1000
4.0
Ta= 25°C, IF = 10mA
Vcc = 5V, Vth = 1.5V
100
3.5
3.0
tPLH
2.5
10
1
.1
tP HL
1 10
RL - Load Resistor - KΩ
2.0
1.5
1.0
100
Figure 18. -2, -3 Propagation delay versus collector
load resistor
1000
2.5
Ta = 25°C, IF = 10mA
Vcc = 5V, Vth = 1.5V
100 2.0
tPLH
10 1.5
tPHL
1
.1 1 10
RL - Collector Load Resistor - KΩ
1.0
100
Figure 19. -4 Propagation delay versus collector
load resistor
1000
2.5
Ta = 25°C, IF = 10mA
Vcc = 5V, Vth = 1.5V
100 2.0
tPLH
10 1.5
tPHL
1
.1 1 10
RL - Collector Load Resistor - KΩ
1.0
100
ILD/Q615
5–5
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| Information | Total 5 Pages | |
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