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PDF ILQ620 Data sheet ( Hoja de datos )
| Número de pieza | ILQ620 | |
| Descripción | AC INPUT PHOTOTRANSISTOR OPTOCOUPLER | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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FEATURES
• Identical Channel to Channel Footprint
ILD620 Crosses to TLP620-2
ILQ620 Crosses to TLP620-4
• Current Transfer Ratio (CTR) at IF= ±5 mA
ILD/Q620: 50% Min.
ILD/Q620GB: 100% Min.
• Saturated Current Transfer Ratio (CTRSAT)
at IF= ±1 mA
ILD/Q620: 60% Typ.
ILD/Q620GB: 30% Min.
• High Collector-Emitter Voltage, BVCEO=70 V
• Dual and Quad Packages Feature:
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Isolation Test Voltage from Double Molded
Package
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Forward Current .........................................± 60 mA
Surge Current............................................... ± 1.5 A
Power Dissipation ...................................... 100 mW
Derate from 25°C .................................. 1.3 mW/°C
Detector
Collector-Emitter Breakdown Voltage ............. 70 V
Collector Current.......................................... 50 mA
Collector Current (t <1 ms) ......................... 100 mA
Power Dissipation ...................................... 150 mW
Derate from 25°C ..................................... 2 mW/°C
Package
Isolation Test Voltage(t=1 sec.)......... 5300 VACRMS
Package Dissipation, ILD620/GB ............. 400 mW
Derate from 25°C ............................... 5.33 mW/°C
Package Dissipation, ILQ620/GB ............. 500 mW
Derate from 25°C ............................... 6.67 mW/°C
Creepage ................................................7 mm min.
Clearance ...............................................7 mm min.
Isolation Resistance
VIO=500 V, TA=25°C ................................≥1012 Ω
VIO=500 V, TA=100°C .............................≥10 11 Ω
Storage Temperature .................. –55°C to +150°C
Operating Temperature............... –55°C to +100°C
Junction Temperature ................................... 100°C
Soldering Temperature
(2 mm from case bottom).......................... 260°C
DUAL CHANNEL ILD620/620GB
QUAD CHANNEL ILQ620/620GB
AC INPUT PHOTOTRANSISTOR
OPTOCOUPLER
Dimensions in inches (mm)
.268 (6.81)
.255 (6.48)
43
Pin One I.D.
21
K=Cathode
A/K 1
8 Collector
A/K 2
7 Emitter
56 78
.390 (9.91)
.379 (9.63)
A/K 3
A/K 4
6 Collector
5 Emitter
.045 (1.14) .150 (3.81)
.030 (.76) .130 (3.30)
.305 Typ.
(7.75) Typ.
4° Typ.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
.100 (2.54) Typ.
10 ° Typ.
3°–9°
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
.268 (6.81)
.255 (6.48)
4° Typ.
.022 (.56)
.018 (.46)
K=Cathode
A/K 1
16 Collector
Pin One I.D. A/K 2
A/K 3
15 Emitter
14 Collector
A/K 4
13 Emitter
A/K 5
12 Collector
A/K 6
11 Emitter
.790 (20.07)
.779 (19.77 )
A/K 7
A/K 8
10 Collector
9 Emitter
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
.305 Typ.
(7.75) Typ.
.100 (2.54) Typ.
.040 (1.02)
.030 (.76 )
10 ° Typ.
3°–9°
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
DESCRIPTION
The ILD/Q620 and ILD/Q620GB are multi-channel input phototran-sistor
optocouplers that use inverse parallel GaAs IRLED emitters and high gain
NPN silicon phototransistors per channel. These devices are constructed
using over/under leadframe optical coupling and double molded insulation
resulting in a Withstand Test Voltage of 7500 VACPEAK.
The LED parameters and the linear CTR characteristics combined with the
TRIOS field-effect process make these devices well suited for AC voltage
detection. The ILD/Q620GB with its low IF guaranteed CTRCEsat minimizes
power dissipation of the AC voltage detection network that is placed in
series with the LEDs. Eliminating the phototransistor base connection pro-
vides added electrical noise immunity from the transients found in many
industrial control environments.
5–1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet ILQ620.PDF ] | |
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