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부품번호 | ILQ621 기능 |
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기능 | MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER | ||
제조업체 | Siemens Semiconductor Group | ||
로고 | |||
전체 4 페이지수
DUAL CHANNEL ILD621/621GB
QUAD CHANNEL ILQ621/621GB
MULTI-CHANNEL PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• Alternate Source to TLP621-2/-4 and
TLP621GB-2/-4
• Current Transfer Ratio (CTR) at IF= 5 mA
ILD/Q621: 50% Min.
ILD/Q621GB: 100% Min.
• Saturated Current Transfer Ratio (CTRSAT)
at IF=1 mA
ILD/Q621: 60% Typ.
ILD/Q621GB: 30% Min.
• High Collector-Emitter Voltage, BVCEO=70 V
• Dual and Quad Packages Feature:
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
• Field-Effect Stable by TRIOS (TRansparent
IOn Shield)
• Isolation Test Voltage from Double Molded
Package, 5300 VACRMS
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Reverse Voltage .................................................6 V
Forward Current ...........................................60 mA
Surge Current .................................................1.5 A
Power Dissipation.......................................100 mW
Derate from 25°C ................................1.33 mW/°C
Detector
Collector-Emitter Reverse Voltage ...................70 V
Collector Current .......................................... 50 mA
Collector Current (t <1 ms)..........................100 mA
Power Dissipation.......................................150 mW
Derate from 25°C .................................... –2 mW/°C
Package
Isolation Test Voltage
(t=1 sec.) ......................................... 7500 VACPK
(t=1 min.) ....................................... 5300 VACRMS
Package Dissipation ILD620/GB............... 400 mW
Derate from 25°C ...............................5.33 mW/°C
Package Dissipation ILQ620/GB ..............500 mW
Derate from 25°C ...............................6.67 mW/°C
Creepage ............................................... 7 mm min.
Clearance............................................... 7 min min.
Isolation Resistance
VIO=500 V, TA=25°C ............................... ≥1012 Ω
VIO=500 V, TA=100°C ............................. ≥1011 Ω
Storage Temperature................... –55°C to +150°C
Operating Temperature ................–55°C to +100°C
Junction Temperature.................................... 100°C
Soldering Temperature
(2 mm from case bottom) .......................... 260°C
Dimensions in inches (mm)
43
21
Pin One I.D.
.268 (6.81)
.255 (6.48)
56
78
.390 (9.91)
.379 (9.63)
Anode 1
Cathode 2
Cathode 3
Anode 4
8 Emitter
7 Collector
6 Collector
5 Emitter
4°
Typ.
.022 (.56)
.018 (.46)
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
.100 (2.54)
Typ.
.268 (6.81)
.255 (6.48)
.790 (20.07)
.779 (19.77 )
.045 (1.14)
.030 (.76)
4°
Typ.
.022 (.56)
.018 (.46)
.100 (2.54)
Typ.
.305 typ.
(7.75) typ.
10°
Typ.
3°–9°
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
Pin One I.D. Anode 1
Cathode 2
Cathode 3
Anode 4
Anode 5
Cathode 6
Cathode 7
Anode 8
16 Emitter
15 Collector
14 Collector
13 Emitter
12 Emitter
11 Collector
10 Collector
9 Emitter
.305 typ.
(7.75) typ.
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
10°
Typ.
3°–9°
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
DESCRIPTION
The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocou-
plers that use GaAs IRLED emitters and high gain NPN silicon phototransis-
tors. These devices are constructed using over/under leadframe optical
coupling and double molded insulation technology. This assembly process
offers a withstand test voltage of 7500 VDC.
The ILD/Q621GB is well suited for CMOS interfacing given the CTRCEsat of
30% minimum at IF of 1 mA. High gain linear operation is guaranteed by a
minimum CTRCE of 100% at 5 mA. The ILD/Q621 has a guaranteed CTRCE of
50% minimum at 5 mA. The TRansparent IOn Shield insures stable DC gain
in applications such as power supply feedback circuits, where constant DC
VIO voltages are present.
5–1
Figure 9. Collector-emitter leakage versus temperature
105
10 4
10 3
10 2
101 Vce = 10V
100 TYPICAL
10 -1
10
-2
-20
0 20 40 60 80 100
Ta - Ambient Temperature - °C
Figure 10. Propagation delay versus collector load
resistor
1000
100
Ta = 25°C, IF =
10mA
VVctcpH=L5 V,Vth = 1.5
2. 5
2. 0
10
tpLH
1. 5
1 1.0
.1 1 10 100
RL - Collector Load Resistor - KΩ
Figure 11. Maximum detector power dissipation
200
150
Figure 13. Normalization factor for non-saturated and
saturated CTR TA=50°C versus If
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
1.5
NCTRce
1.0
NCTRce(sat)
0.5
Ta = 50°C
0.0
.1
1 10
IF - LED Current - mA
100
Figure 14. Normalization factor for non-saturated and
saturated CTR TA=70°C versus If
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
1.5
1.0
0.5
0.0
.1
NCTRce
NCTRce(sat)
Ta = 70°C
1 10
IF - LED Current - mA
100
Figure 15. Normalization factor for non-saturated and
saturated CTR TA=100°C versus If
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25°C
1.5 CTRce(sat) Vce = 0.4V
100
50
0
-60 -40 -20 0
20 40 60
Ta - Ambient Temperature - °C
80 100
Figure 12. Maximum collector current versus
collector voltage
1000
Rth = 500°C/W
100
10
25°C
50°C
75°C
1
90°C
1.0
NCTRce
0.5
0.0
.1
NCTRce(sat)
Ta = 100°C
1 10
IF - LED Current - mA
100
Figure 16. Peak LED current versus pulse duration, Tau
10000
Duty Factor
τ
1000
100
.005
.01
.02
.05
.1
.2
.5
t
τ
DF = /t
.1
.1 1 10
Vce - Collector-Emitter Voltage - V
100
1010-6 10-5 10-4 10-3 10 -2 10-1 10 0 10 1
t - LED Pulse Duration - s
ILD/Q621/GB
5–4
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |