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ILQ621 데이터시트 PDF




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부품번호 ILQ621 기능
기능 MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER
제조업체 Siemens Semiconductor Group
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ILQ621 데이터시트, 핀배열, 회로
DUAL CHANNEL ILD621/621GB
QUAD CHANNEL ILQ621/621GB
MULTI-CHANNEL PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• Alternate Source to TLP621-2/-4 and
TLP621GB-2/-4
• Current Transfer Ratio (CTR) at IF= 5 mA
ILD/Q621: 50% Min.
ILD/Q621GB: 100% Min.
• Saturated Current Transfer Ratio (CTRSAT)
at IF=1 mA
ILD/Q621: 60% Typ.
ILD/Q621GB: 30% Min.
• High Collector-Emitter Voltage, BVCEO=70 V
• Dual and Quad Packages Feature:
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
• Field-Effect Stable by TRIOS (TRansparent
IOn Shield)
• Isolation Test Voltage from Double Molded
Package, 5300 VACRMS
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Reverse Voltage .................................................6 V
Forward Current ...........................................60 mA
Surge Current .................................................1.5 A
Power Dissipation.......................................100 mW
Derate from 25°C ................................1.33 mW/°C
Detector
Collector-Emitter Reverse Voltage ...................70 V
Collector Current .......................................... 50 mA
Collector Current (t <1 ms)..........................100 mA
Power Dissipation.......................................150 mW
Derate from 25°C .................................... –2 mW/°C
Package
Isolation Test Voltage
(t=1 sec.) ......................................... 7500 VACPK
(t=1 min.) ....................................... 5300 VACRMS
Package Dissipation ILD620/GB............... 400 mW
Derate from 25°C ...............................5.33 mW/°C
Package Dissipation ILQ620/GB ..............500 mW
Derate from 25°C ...............................6.67 mW/°C
Creepage ............................................... 7 mm min.
Clearance............................................... 7 min min.
Isolation Resistance
VIO=500 V, TA=25°C ............................... 1012
VIO=500 V, TA=100°C ............................. 1011
Storage Temperature................... –55°C to +150°C
Operating Temperature ................–55°C to +100°C
Junction Temperature.................................... 100°C
Soldering Temperature
(2 mm from case bottom) .......................... 260°C
Dimensions in inches (mm)
43
21
Pin One I.D.
.268 (6.81)
.255 (6.48)
56
78
.390 (9.91)
.379 (9.63)
Anode 1
Cathode 2
Cathode 3
Anode 4
8 Emitter
7 Collector
6 Collector
5 Emitter
4°
Typ.
.022 (.56)
.018 (.46)
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
.100 (2.54)
Typ.
.268 (6.81)
.255 (6.48)
.790 (20.07)
.779 (19.77 )
.045 (1.14)
.030 (.76)
4°
Typ.
.022 (.56)
.018 (.46)
.100 (2.54)
Typ.
.305 typ.
(7.75) typ.
10°
Typ.
3°–9°
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
Pin One I.D. Anode 1
Cathode 2
Cathode 3
Anode 4
Anode 5
Cathode 6
Cathode 7
Anode 8
16 Emitter
15 Collector
14 Collector
13 Emitter
12 Emitter
11 Collector
10 Collector
9 Emitter
.305 typ.
(7.75) typ.
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
10°
Typ.
3°–9°
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
DESCRIPTION
The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocou-
plers that use GaAs IRLED emitters and high gain NPN silicon phototransis-
tors. These devices are constructed using over/under leadframe optical
coupling and double molded insulation technology. This assembly process
offers a withstand test voltage of 7500 VDC.
The ILD/Q621GB is well suited for CMOS interfacing given the CTRCEsat of
30% minimum at IF of 1 mA. High gain linear operation is guaranteed by a
minimum CTRCE of 100% at 5 mA. The ILD/Q621 has a guaranteed CTRCE of
50% minimum at 5 mA. The TRansparent IOn Shield insures stable DC gain
in applications such as power supply feedback circuits, where constant DC
VIO voltages are present.
5–1




ILQ621 pdf, 반도체, 판매, 대치품
Figure 9. Collector-emitter leakage versus temperature
105
10 4
10 3
10 2
101 Vce = 10V
100 TYPICAL
10 -1
10
-2
-20
0 20 40 60 80 100
Ta - Ambient Temperature - °C
Figure 10. Propagation delay versus collector load
resistor
1000
100
Ta = 25°C, IF =
10mA
VVctcpH=L5 V,Vth = 1.5
2. 5
2. 0
10
tpLH
1. 5
1 1.0
.1 1 10 100
RL - Collector Load Resistor - K
Figure 11. Maximum detector power dissipation
200
150
Figure 13. Normalization factor for non-saturated and
saturated CTR TA=50°C versus If
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
1.5
NCTRce
1.0
NCTRce(sat)
0.5
Ta = 50°C
0.0
.1
1 10
IF - LED Current - mA
100
Figure 14. Normalization factor for non-saturated and
saturated CTR TA=70°C versus If
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
1.5
1.0
0.5
0.0
.1
NCTRce
NCTRce(sat)
Ta = 70°C
1 10
IF - LED Current - mA
100
Figure 15. Normalization factor for non-saturated and
saturated CTR TA=100°C versus If
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25°C
1.5 CTRce(sat) Vce = 0.4V
100
50
0
-60 -40 -20 0
20 40 60
Ta - Ambient Temperature - °C
80 100
Figure 12. Maximum collector current versus
collector voltage
1000
Rth = 500°C/W
100
10
25°C
50°C
75°C
1
90°C
1.0
NCTRce
0.5
0.0
.1
NCTRce(sat)
Ta = 100°C
1 10
IF - LED Current - mA
100
Figure 16. Peak LED current versus pulse duration, Tau
10000
Duty Factor
τ
1000
100
.005
.01
.02
.05
.1
.2
.5
t
τ
DF = /t
.1
.1 1 10
Vce - Collector-Emitter Voltage - V
100
1010-6 10-5 10-4 10-3 10 -2 10-1 10 0 10 1
t - LED Pulse Duration - s
ILD/Q621/GB
5–4

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