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PDF IMX8 Data sheet ( Hoja de datos )
| Número de pieza | IMX8 | |
| Descripción | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
| Fabricantes | Diodes Incorporated | |
| Logotipo |  |
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Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (IMT4)
• Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• "Green" Device, Note 4 and 5
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 5. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
• Marking Information: KX8, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.016 grams (approximate)
IMX8
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
A
B2 B1 E1
BC
C2 E2 C1
H
K
J DF
B2 B1 E1
L
C2 E2 C1
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ⎯ ⎯ 0.95
F ⎯ ⎯ 0.55
H 2.90 3.10 3.00
M
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
α 0° 8° ⎯
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj, TSTG
Value
120
120
5.0
50
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol Min Typ Max Unit
Test Condition
V(BR)CBO 120
⎯
⎯
V IC = 50μA
V(BR)CEO 120
⎯
⎯
V IC = 1.0mA
V(BR)EBO 5.0
⎯
⎯
V IE = 50μA
ICBO
⎯
⎯ 0.5 μA VCB = 100V
IEBO
⎯
⎯ 0.5 μA VEB = 4.0V
hFE 180 ⎯ 820 ⎯ IC = 2.0mA, VCE = 6.0V
VCE(SAT)
⎯
⎯ 0.5
V IC = 10mA, IB = 1.0mA
fT
⎯
140
⎯
MHz VCE = 12V, IC = 2.0mA,
f = 100MHz
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30304 Rev. 8 - 2
1 of 3
www.diodes.com
IMX8
© Diodes Incorporated
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