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INT100S 데이터시트 PDF




Power Integrations Inc.에서 제조한 전자 부품 INT100S은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 INT100S 자료 제공

부품번호 INT100S 기능
기능 Low-Side and High-side Drive with Simultaneous Conduction Lockout
제조업체 Power Integrations Inc.
로고 Power Integrations  Inc. 로고


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INT100S 데이터시트, 핀배열, 회로
INT100
®
Half-Bridge Driver IC
Low-Side and High-side Drive
with Simultaneous Conduction Lockout
Product Highlights
5 V CMOS Compatible Control Inputs
• Combines logic inputs for low and high-side drives
• Schmidt-triggered inputs for noise immunity
HV
Built-in High-voltage Level Shifters
• Can withstand up to 800 V for direct interface to the HV-
referenced high-side switch
• Pulsed internal high-voltage level shifters reduce power
consumption
Gate Drive Outputs for External MOSFETs
• Provides 300 mA sink/150 mA source current
• Can drive MOSFET gates at up to 15 V
• External MOSFET allows flexibility in design for various
motor sizes
VDD
HS IN
LS IN
COM
VDDH
HS OUT
HS RTN
LS OUT
LS
RTN
INT100
Built-in Protection Features
• Simultaneous conduction lockout protection
• Undervoltage lockout
Description
The INT100 half-bridge driver IC provides gate drive for
external low-side and high-side MOSFET switches. The INT100
provides a simple, cost-effective interface between low-voltage
control logic and high-voltage loads. The INT100 is designed
to be used with rectified 110 V or 220 V supplies. Both high-
side and low-side switches can be controlled independently
from ground-referenced 5 V logic inputs.
Built-in protection logic prevents both switches from turning
on at the same time and shorting the high voltage supply. Pulsed
internal level shifting saves power and provides enhanced noise
immunity. The circuit is powered from a nominal 15 V supply
to provide adequate gate drive for external N-channel MOSFETs.
A floating high-side supply is derived from the low-voltage rail
by using a simple bootstrap technique.
Figure 1. Typical Application
VDD
HS IN
LS IN
COM
COM
N/C
LS RTN
LS OUT
1
2
3
4
5
6
7
8
Figure 2. Pin Configuration.
PI-1807-031296
16 N/C
15 VDDH
14 HS RTN
13 HS RTN
12 HS RTN
11 HS OUT
10 N/C
9 N/C
PI-1067-101493
Applications for the INT100 include motor drives, electronic
ballasts, and uninterruptible power supplies. Multiple devices
can also be used to implement full-bridge and multi-phase
configurations.
The INT100 is available in a 16-pin plastic SOIC package.
ORDERING INFORMATION
PART
NUMBER
PACKAGE
OUTLINE
ISOLATION
VOLTAGE
INT100S
S16A
800 V
June 1996




INT100S pdf, 반도체, 판매, 대치품
INT100
HV+
VDD
HS IN
LS IN
C1
D1
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
INT100
C2
R2
R1
HV-
Figure 4. Using the INT100 in a 3-phase Configuration.
Q2
PHASE 1
Q1
PHASE 2
PHASE 3
PI-1458-042695
4C
6/96
400
300
200
100
VIN = 200 V
VIN = 300 V
VIN = 400 V
0
0
100
200
Gate Charge (nC)
Figure 5. Gate Charge versus Switching Frequency.

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INT100S 전자부품, 판매, 대치품
INT100
Parameter
LEVEL SHIFT
Symbol
Conditions
(Unless Otherwise Specified)
V = V = 15 V
DDH
DD
HS RTN = LS RTN = COM = 0 V
T
A
=
-40
to
85°C
Breakdown
Voltage
Leakage
Current
BV
DSS
I
HS RTN)
V = HS OUT = HS RTN
DDH
I
HS
RTN
=
100
µA
VDDH = HS OUT = HS RTN = 500 V
Interface
Capacitance
V = HS OUT = HS RTN = 500 V
DDH
SYSTEM RESPONSE
Deadtime (Low
Off to High On)
DtP+
See Figure 7
Deadtime (High
Off to Low On)
Dt
P-
See Figure 7
UNDERVOLTAGE LOCKOUT
Input UV
Trip-off Voltage
VDD(UV)
V
DDH(UV)
Input UV
Hysteresis
SUPPLY
Supply
Current
IDD, IDDH
See Note 2
Supply
Voltage
VDD, VDDH
Min
800
0
0
8.5
175
10
Typ
0.2
20
450
300
9.0
350
1.5
Max
30
10
3.0
16
Units
V
µA
pF
ns
ns
V
mV
mA
V
NOTES:
1. Applying a short circuit to the LS OUT or HS OUT pin for more than 500 µs will exceed the thermal rating of the
package, resulting in destruction of the part.
2.
V,
DD
V
DDH
supply
must
have
less
than
30
output
impedance.
7C
6/96

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관련 데이터시트

부품번호상세설명 및 기능제조사
INT100

Low-Side and High-side Drive with Simultaneous Conduction Lockout

Power Integrations  Inc.
Power Integrations Inc.
INT100S

Low-Side and High-side Drive with Simultaneous Conduction Lockout

Power Integrations  Inc.
Power Integrations Inc.

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