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mje15028 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 mje15028
기능 Complementary Silicon Plastic Power Transistors
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mje15028 데이터시트, 핀배열, 회로
MJE15028, MJE15030 (NPN),
MJE15029, MJE15031 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use as high−frequency drivers in
audio amplifiers.
Features
High Current Gain − Bandwidth Product
TO−220 Compact Package
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
VCEO
120
150
Vdc
Collector−Base Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
VCB Vdc
120
150
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ TC = 25_C
Derate above 25°C
VEB 5.0 Vdc
IC 8.0 Adc
ICM 16 Adc
IB 2.0 Adc
PD
50 W
0.40 W/_C
Total Device Dissipation
@ TA = 25_C
Derate above 25°C
PD
2.0 W
0.016
W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
RqJC
RqJA
Max
2.5
62.5
Unit
_C/W
_C/W
http://onsemi.com
8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
120−150 VOLTS, 50 WATTS
PNP
COLLECTOR
2,4
NPN
COLLECTOR
2,4
1
BASE
1
BASE
3
EMITTER
4
3
EMITTER
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
MJE150xxG
AY WW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MJE150xx = Device Code
x = 28, 29, 30, or 31
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 7
1
Publication Order Number:
MJE15028/D




mje15028 pdf, 반도체, 판매, 대치품
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
100
50
30
VCE = 10 V
20 IC = 0.5 A
PNP
TC = 25°C
NPN
10
5.0
0.5 0.7 1.0
2.0 3.0
f, FREQUENCY (MHz)
5.0 7.0
Figure 6. Small−Signal Current Gain
10
100
90 (PNP)
(NPN)
60
50
20
10
0
0.1 0.2
0.5 1.0 2.0
5.0
IC, COLLECTOR CURRENT (AMP)
10
Figure 7. Current Gain−Bandwidth Product
1K
500
200
150
100
70
50
30
20
10
0.1
NPN — MJE15028 MJE15030
TJ = 150°C
TJ = 25°C
TJ = - 55°C
VCE = 2.0 V
PNP — MJE15029 MJE15031
1K
500
TJ = 150°C
200
100 TJ = 25°C
TJ = - 55°C
50
VCE = 2 V
20
10
0.2 0.5 1.0 2.0 5.0 10
0.1 0.2
0.5 1.0 2.0
5.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
NPN
PNP
10
TJ = 25°C
1.6
1.2
1.0
0.6
0.2
0.1
0.2
1.8 TJ = 25°C
1.4
VBE(sat) @ IC/IB = 10
1.0
0.8 VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2.0 V
VCE(sat) = IC/IB = 20
0.5 1.0
IC/IB = 10
2.0 5.0
10
0.4
0
0.1
VBE(on) @ VCE = 2.0 V
VCE(sat) = IC/IB = 20
0.2 0.5
1.0
2.0
IC/IB = 10
5.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltage
10
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