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PDF JANKCB2N2484 Data sheet ( Hoja de datos )
| Número de pieza | JANKCB2N2484 | |
| Descripción | SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC | |
| Fabricantes | STMicroelectronics | |
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The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 31 November 2000.
INCH-POUND
MIL-PRF-19500/376E
31 August 2000
SUPERSEDING
MIL-PRF-19500/376D
21 August 1998
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.
Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and
UB), and figures 4 and 5 (die).
1.3 Maximum ratings.
Types
PT
TA = +25°C
VCBO
VEBO
VCEO
IC
TJ and TSTG
RθJA
RθJC
mW
V dc
V dc
V dc
2N2484
500 (1)
60
6 60
2N2484UA
650 (2)
60
6 60
2N2484UB
500 (1)
60
6 60
(1) Derate linearly at 3.08 mW/°C above TA = +37.5°C
(2) Derate linearly at 4.76 mW/°C above TA = +63.5°C.
1.4 Primary electrical characteristics.
mA dc
50
50
50
°C
-65 to +200
-65 to +200
-65 to +200
°C/W
325
210
325
°C/W
146
160
146
Limits
hfe
VCE = 5 V dc
IC = 1 mA dc
f = 1 kHz
Cobo
IE = 0
VCB = 5 V dc
100 kHz ≤ f ≤ 1 MHz
pF
Min 250
Max 900
(1) Pulsed (see 4.5.1).
5.0
|hfe|2
IC = 500 µA dc
VCE = 5 V dc
f = 30 MHz
2.0
7.0
VCE(sat) (1)
IC = 1.0 mA dc
IB = 0.1 mA dc
V dc
0.3
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
1 page  
MIL-PRF-19500/376E
A- version
NOTES:
1. Die size...............................................0.015 x 0.019 inches ± 0.001 inch
2. Die thickness.......................................0.010 ± 0.0015 inches
3. Top metal............................................Aluminum 15,000Å minimum, 18,000Å nominal
4. Back metal..........................................A. Gold 2,500Å minimum, 3,000Å nominal
B. Eutectic Mount – No Gold
5. Backside .............................................Collector
6. Bonding pad........................................B = 0.003 inches, E = 0.004 inches diameter
7. Passivation .........................................Si3N4 (Silicon Nitride) 2kÅ min, 2.2kÅ nom.
FIGURE 4. Physical dimensions, JANHC and JANKC die, A - version.
5
5 Page 
MIL-PRF-19500/376E
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX, and JANTXV, samples shall be selected randomly from a minimum of three wafers (or
from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection
lot. See MIL-PRF-19500.
b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and JANTXV)
herein for group C testing. Electrical measurements (end-points) shall be in accordance with group A, subgroup 2
herein. Delta requirements shall be in accordance with table III herein.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup Method Condition
C2 2036 Test condition E (not applicable to UA and UB suffix devices).
C6 1026 1,000 hours at VCB = 10 -30 V dc; power shall be applied to achieve TJ = 150°C minimum
and a minimum power dissipation PD = 75 percent of maximum rated PT as defined in 1.3
herein.
4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup Method Condition
C2 2036 Test condition E (not applicable to UA and UB suffix devices).
C6 Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device
type enclosed in the intended package type shall be considered as complying with the requirements for that
subgroup.
4.4.4 Group E inspection. Group E inspection shall be performed for qualification or re-qualification only. The
tests specified in table II herein must be performed to maintain qualification.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-
750.
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