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JANTXV2N6760 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 JANTXV2N6760은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 JANTXV2N6760 기능
기능 TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=1.00ohm/ Id=5.5A)
제조업체 International Rectifier
로고 International Rectifier 로고


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JANTXV2N6760 데이터시트, 핀배열, 회로
PD - 90335F
IRF330
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
JANTX2N6760
JANTXV2N6760
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]
400V, N-CHANNEL
Product Summary
Part Number BVDSS
IRF330
400V
RDS(on)
1.00
ID
5.5A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
5.5
3.5 A
22
75 W
0.60
W/°C
±20 V
1.7 mJ
5.5 A
— mJ
4.0 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01




JANTXV2N6760 pdf, 반도체, 판매, 대치품
IRF330
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
13 a& b
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
www.irf.com

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JANTXV2N6760 전자부품, 판매, 대치품
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD =50V, starting TJ = 25°C,
Peak IL = 5.5A,
IRF330
ISD 5.5A, di/dt 90A/µs,
VDD400V, TJ 150°C
Suggested RG =7.5
Pulse width 300 µs; Duty Cycle 2%
Case Outline and Dimensions —TO-204AA (Modified TO-3)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 01/01
www.irf.com
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부품번호상세설명 및 기능제조사
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