|
|
|
부품번호 | JANTXV2N6764 기능 |
|
|
기능 | TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.055ohm/ Id= 38A) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 7 페이지수
PD - 90337G
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
IRF150
JANTX2N6764
THRU-HOLE (TO-204AA/AE)
JANTXV2N6764
[REF:MIL-PRF-19500/543]
Product Summary
100V, N-CHANNEL
Part Number BVDSS RDS(on) ID
IRF150
100V 0.055Ω 38A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
38
24 A
152
150 W
1.2 W/°C
±20 V
150 mJ
38 A
15 mJ
5.5
-55 to 150
V/ns
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
08/21/01
IRF150
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
13 a& b
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 Foot Notes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD =50V, starting TJ = 25°C,
Peak IL = 38A, VGS =10V
IRF150
➂ ISD ≤ 38A, di/dt ≤300A/µs,
VDD≤ 100V, TJ ≤ 150°C
Suggested RG =2.35 Ω
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions —TO-204AE (Modified TO-3)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/01
www.irf.com
7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ JANTXV2N6764.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
JANTXV2N6760 | TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=1.00ohm/ Id=5.5A) | International Rectifier |
JANTXV2N6760 | POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.00ohm/ Id=5.5A) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |