|
|
|
부품번호 | JANTXV2N6786 기능 |
|
|
기능 | POWER MOSFET N-CHANNEL | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 7 페이지수
PD-90425D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF310
400V 3.6Ω
ID
1.25A
IRFF310
JANTX2N6786
JANTXV2N6786
REF:MIL-PRF-19500/556
400V, N-CHANNEL
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
1.25
0.80
A
5.5
15 W
0.12
W/°C
±20 V
0.82
mJ
1.25
A
1.5 mJ
4.0 V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
g
For footnotes refer to the last page
www.irf.com
1
05/15/15
IRFF310, JANTX2N6786
Fig5. TypicalCapacitanceVs.
Drain-to-SourceVoltage
Fig7. TypicalSource-DrainDiode
ForwardVoltage
4
1113313a3aa&&a&&bbbb
Fig6. TypicalGateChargeVs.
Gate-to-SourceVoltage
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100µs
1
1ms
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
1 10
10ms
DC
100 1000
VDS , Drain-to-Source Voltage (V)
Fig8. MaximumSafeOperatingArea
www.irf.com
4페이지 Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C,
Peak IL = 1.25A,
IRFF310, JANTX2N6786
 ISD ≤ 1.25A, di/dt ≤ 40A/µs,
VDD ≤ 400V, TJ ≤ 150°C, Suggested RG =7.5 Ω
à Pulse width ≤ 300µs; Duty Cycle ≤ 2%
Case Outline and Dimensions —TO-205AF (TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd. El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2015
www.irf.com
7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ JANTXV2N6786.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
JANTXV2N6782 | POWER MOSFET N-CHANNEL | International Rectifier |
JANTXV2N6784 | TRANSISTORS | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |