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부품번호 | JANTXV2N6788 기능 |
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기능 | POWER MOSFET N-CHANNEL | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 7 페이지수
PD-90426D
IRFF120
JANTX2N6788
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6788
HEXFET®TRANSISTORS
REF:MIL-PRF-19500/555
THRU-HOLE (TO-205AF)
100V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on)
IRFF120
100V 0.30Ω
ID
6.0A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
T0-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
6.0
3.5
24
20
0.16
±20
0.242
2.2
2.0
5.5
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
g
For footnotes refer to the last page
www.irf.com
1
09/03/07
IRFF120, JANTX2N6788, JANTXV2N6788
13 a & b
Fig5. TypicalCapacitanceVs.
Drain-to-SourceVoltage
100
Fig6. TypicalGateChargeVs.
Gate-to-SourceVoltage
10
TJ = 150°C
1.0
TJ = 25°C
0.1
0
VGS = 0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-to-Drain Voltage (V)
Fig7. TypicalSource-DrainDiode
ForwardVoltage
4
Fig8. MaximumSafeOperatingArea
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4페이지 IRFF120, JANTX2N6788, JANTXV2N6788
Foot Notes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C,
Peak IL = 2.2A, L = 100µH
 ISD ≤ 6.0A, di/dt ≤ 110A/µs,
VDD≤ 100V, TJ ≤ 150°C
Suggested RG =7.5 Ω
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — TO-205AF(Modified TO-39)
LEGEND
LEG12E132---N-- DSGSDGOOARAUTUATRERIENCCEE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/2007
www.irf.com
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부품번호 | 상세설명 및 기능 | 제조사 |
JANTXV2N6782 | POWER MOSFET N-CHANNEL | International Rectifier |
JANTXV2N6784 | TRANSISTORS | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |