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Datasheet JDH2S01T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | JDH2S01T | UHF Band Mixer JDH2S01T
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S01T
UHF Band Mixer
· Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Maximum (peak) reverse voltage Forward cur |  Toshiba Semiconductor | data |
JDH Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | JDH2S01FS | UHF Band Mixer JDH2S01FS
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S01FS
UHF Band Mixer
• •
ｶｿｰﾄﾞﾏｰｸ
Unit: mm
Suitable for reducing set size through the use of a two-pin small package supporting high-density mounting
0.6±0.05 0.1 0.8±0.05
A
Characteristic Maximum (peak) Toshiba Semiconductor data | | |
| 2 | JDH2S01T | UHF Band Mixer JDH2S01T
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S01T
UHF Band Mixer
· Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Maximum (peak) reverse voltage Forward cur Toshiba Semiconductor data | | |
| 3 | JDH2S02FS | UHF Band Mixer JDH2S02FS
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S02FS
UHF Band Mixer
• Suitable for reducing set size through the use of a two-pin small package supporting high-density mounting Unit: mm
0.6±0.05 0.1 0.8±0.05
A
Characteristic Maximum (peak) reverse voltage Forward current Toshiba Semiconductor data | | |
| 4 | JDH3D01FV | Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01FV
○ For wave detection
¾ Small package
0.22±0.05 1.2±0.05 0.32±0.05 3 0.13±0.05 1. ANODE1 2. CATHODE2 3. CATHODE1/ANODE2 0.8±0.05
Unit: mm
1.2±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltag Toshiba Semiconductor diode | | |
| 5 | JDH3D01S | Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01S
○ For wave detection
¾ Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 −55~1 Toshiba Semiconductor diode | |
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