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부품번호 | K4X56163PE-LG 기능 |
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기능 | 16M x16 Mobile DDR SDRAM | ||
제조업체 | Samsung semiconductor | ||
로고 | |||
K4X56163PE-L(F)G
Mobile-DDR SDRAM
16M x16 Mobile DDR SDRAM
FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
- CAS Latency ( 3 )
- Burst Length ( 2, 4, 8 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 array )
- Internal Temperature Compensated Self Refresh
- Driver strength ( 1, 1/2, 1/4, 1/8 )
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM/UDM for write masking only.
• 7.8us auto refresh duty cycle.
• CSP package.
Operating Frequency
Speed @CL3
*CL : CAS Latency
DDR200
100Mhz
DDR133
66Mhz
Column address configuration
Organization
16Mx16
DM is internally loaded to match DQ and DQS identically.
Row Address
A0 ~ A12
Column Address
A0-A8
1 March 2004
K4X56163PE-L(F)G
Functional Description
Simplified State Diagram
Mobile-DDR SDRAM
EXTENDED
MODE
REGISTER
SET
MODE
REGISTER
SET
EMRS
MRS
PARTIAL
SELF
REFRESH SELF
REFRESH
REFS
REFSX
IDLE
REFA
AUTO
REFRESH
CKEL
POWER
DOWN
CKEH
ACT
CKEH
POWER
DOWN
CKEL
WRITE
ROW
ACTIVE
BURST STOP
READ
WRITEA
WRITE
WRITEA READA
READ
READ
POWER
APPLIED
WRITEA
WRITEA
READA
PRE
PRE
PRE
READA
READA
POWER
ON
PRE
PRE
CHARGE
Figure.1 State diagram
Automatic Sequence
Command Sequence
4 March 2004
4페이지 K4X56163PE-L(F)G
Burst address ordering for burst length
Burst
Length
2
4
8
Starting Address(A2, A1, A0)
xx0
xx1
x00
x01
x10
x11
000
001
010
011
100
101
110
111
Mobile-DDR SDRAM
Sequential Mode
0, 1
1, 0
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
0, 1, 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7, 0
2, 3, 4, 5, 6, 7, 0, 1
3, 4, 5, 6, 7, 0, 1, 2
4, 5, 6, 7, 0, 1, 2, 3
5, 6, 7, 0, 1, 2, 3, 4
6, 7, 0, 1, 2, 3, 4, 5
7, 0, 1, 2, 3, 4, 5, 6
Interleave Mode
0, 1
1, 0
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
0, 1, 2, 3, 4, 5, 6, 7
1, 0, 3, 2, 5, 4, 7, 6
2, 3, 0, 1, 6, 7, 4, 5
3, 2, 1, 0, 7, 6, 5, 4
4, 5, 6, 7, 0, 1, 2, 3
5, 4, 7, 6, 1, 0, 3, 2
6, 7, 4, 5, 2, 3, 0, 1
7, 6, 5, 4, 3, 2, 1, 0
7 March 2004
7페이지 | |||
구 성 | 총 30 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
K4X56163PE-LFG | 16M x16 Mobile DDR SDRAM | Samsung semiconductor |
K4X56163PE-LG | 16M x16 Mobile DDR SDRAM | Samsung semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |