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부품번호 | K6F1008V2C-YF55 기능 |
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기능 | 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM | ||
제조업체 | Samsung semiconductor | ||
로고 | |||
전체 9 페이지수
K6F1008V2C Family
Document Title
128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial Draft
0.1 Revise
- Changed Package Type
: 48(36)-TBGA-6.00x7.00 to 32-TSOP1-0813.4F
1.0 Finalize
Draft Data
November 27, 2001
December 13, 2001
Remark
Preliminary
Preliminary
June 12, 2002
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
June 2002
K6F1008V2C Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note :
1. TA=-40 to 85°C, otherwise specified
2. Overshoot: Vcc+2.0V in case of pulse width ≤20ns.
3. Undershoot: -2.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Min
3.0
0
2.2
-0.33)
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Typ Max Unit
3.3 3.6
V
00V
- Vcc+0.32) V
- 0.6 V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Average operating current
Symbol
ILI VIN=Vss to Vcc
Test Conditions
Min Typ1 Max Unit
-1 - 1 µA
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
-1 - 1 µA
ICC1 Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V - - 3 mA
or VIN≥VCC-0.2V
ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL
- - 35 mA
Output low voltage
VOL IOL=2.1mA
- - 0.4 V
Output high voltage
VOH IOH=-1.0mA
2.4 - - V
Standby Current(CMOS)
ISB1 CS1≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V, Other inputs=0~Vcc - 0.5 52) µA
1. Typical values are measured at VCC=3.3V, TA=25°C and not 100% tested.
2. Super low power product=1µA with special handling.
4 Revision 1.0
June 2002
4페이지 K6F1008V2C Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS1
CS2
WE
Data in
Data out
tAS(3)
Data Undefined
tWC
tCW(2)
tWR(4)
tAW
tCW(2)
tWP(1)
tWHZ
tDW tDH
Data Valid
tOW
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled)
Address
CS1
tAS(3)
tWC
tCW(2)
tAW
tWR(4)
CS2
tWP(1)
WE
Data in
tDW tDH
Data Valid
Data out
High-Z
High-Z
7 Revision 1.0
June 2002
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ K6F1008V2C-YF55.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
K6F1008V2C-YF55 | 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM | Samsung semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |