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부품번호 | K6F3216T6M 기능 |
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기능 | 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | ||
제조업체 | Samsung semiconductor | ||
로고 | |||
K6F3216T6M Family
CMOS SRAM
Document Title
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
1.0
Draft Date
November 4, 2003
Remark
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
November 2002
K6F3216T6M Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note:
1. TA=-40 to 85°C, otherwise specified
2. Overshoot: VCC+2.0V in case of pulse width ≤20ns.
3. Undershoot: -2.0V in case of pulse width ≤20ns.
4. Overshoot and Undershoot are sampled, not 100% tested.
Min
2.7
0
2.2
-0.23)
Typ
3.0/3.3
0
-
-
Max
3.6
0
Vcc+0.32)
0.6
Unit
V
V
V
V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current (CMOS)
Symbol
Test Conditions
Min
ILI VIN=Vss to Vcc
-1
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH, -1
VIO=Vss to Vcc
ICC1 Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V, LB≤0.2V
-
or/and UB≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
ICC2
Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL,
CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH
70ns
55ns
-
-
VOL IOL = 2.1mA
-
VOH IOH = -1.0mA
2.4
Other input =0~Vcc
ISB1 1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or
2) 0V≤CS2≤0.2V(CS2 controlled)
-
Typ1) Max
-1
-1
-7
- 35
- 40
- 0.4
--
- 40
Unit
µA
µA
mA
mA
V
V
µA
1. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested.
4 Revision 1.0
November 2002
4페이지 K6F3216T6M Family
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS1
tWC
tCW(2)
CMOS SRAM
tWR(4)
CS2
UB, LB
WE
Data in
Data out
tAS(3)
High-Z
Data Undefined
tAW
tBW
tWP(1)
tWHZ
tDW tDH
Data Valid
tOW
High-Z
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled)
Address
tWC
CS1
CS2
tAS(3)
tCW(2)
tAW
tWR(4)
UB, LB
WE
Data in
tBW
tWP(1)
tDW tDH
Data Valid
Data out
High-Z
High-Z
7 Revision 1.0
November 2002
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ K6F3216T6M.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
K6F3216T6M | 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor |
K6F3216T6M-F | 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor |
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