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부품번호 | K6L0908C2A-P 기능 |
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기능 | 64Kx8 bit Low Power CMOS Static RAM | ||
제조업체 | Samsung semiconductor | ||
로고 | |||
K6L0908C2A Family
Document Title
64Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
History
Initial draft
0.1 Revision
1.0 Finalize
2.0 Revision
- Add 45ns part with 30pf test load.
3.0 Revision
- Change Data Sheet format :
One data sheets for industrial and commercial product
4.0 Revision
- Change Data Sheet format
- Remove 45ns part from commercial product and 100ns part
from industrial product
- Remove low power part form TSOP package
Draft Data
Novemer 28, 1993
May 13, 1994
December 1, 1994
August 12, 1995
April 15, 1996
January 9, 1998
Remark
Design target
Preliminary
Final
Final
Final
Final
The attached data, sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 4.0
January 1997
K6L0908C2A Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note
1. Commercial Product : TA=0 to 70°C, unless otherwise specified
Industrial Product : TA=-40 to 85°C, unless otherwise specified
2. Overshoot : VCC+3.0V in case of pulse width≤30ns
3. Undershoot : -3.0V in case of pulse width≤30ns
4. Overshoot and undershoot are sampled, not 100% tested
Min
4.5
0
2.2
-0.53)
Typ Max Unit
5.0 5.5 V
0 0V
-
Vcc+0.5V2)
V
- 0.8 V
CAPACITANCE1)(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
- 6 pF
- 8 pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI VIN=Vss to Vcc
Output leakage current
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
Operating power supply current ICC IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL
Average operating current
ICC1
Cycle time=1µs, 100% duty, IIO=0mA
CS1≤0.2V, CS2≥VCC-0.2V, VIN≤0.2V or VIN≥Vcc -0.2V
ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL
Min Typ Max Unit
-1 - 1 µA
-1 - 1 µA
- 7 15 mA
- - 10 mA
- - 70 mA
Output low voltage
VOL IOL=2.1mA
- - 0.4 V
Output high voltage
VOH IOH=-1.0mA
2.4 - - V
Standby Current(TTL)
ISB CS1=VIH, CS2=VIL, Other inputs =VIH or VIL
- - 3 mA
Standby
Current
(CMOS)
K6L0908C2A-L/-B
K6L0908C2A-P/-F
Low Power
ISB1
CS1≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V Low Low Power
Other inputs =0 ~ Vcc
Low Power
Low Low Power
-
-
2
1
100
20
µA
-
-
2
1
100
50
µA
4 Revision 4.0
January 1997
4페이지 K6L0908C2A Family
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS1
CS2
WE
Data in
Data out
tAS(3)
Data Undefined
tWC
tCW(2)
tWR(4)
tAW
tCW(2)
tWP(1)
tWHZ
tDW tDH
Data Valid
tOW
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled)
Address
CS1
tAS(3)
tWC
tCW(2)
tAW
tWR(4)
CS2
tWP(1)
WE
Data in
tDW tDH
Data Valid
Data out
High-Z
High-Z
7 Revision 4.0
January 1997
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ K6L0908C2A-P.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
K6L0908C2A-B | 64Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor |
K6L0908C2A-F | 64Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |