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K6R1008C1D 데이터시트 PDF




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부품번호 K6R1008C1D 기능
기능 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
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K6R1008C1D 데이터시트, 핀배열, 회로
K6R1016V1D
for AT&T
CMOS SRAM
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev.No.
History
Rev. 0.0
Rev. 0.1
Rev. 0.2
Initial document.
Speed bin modify
Current modify
Rev. 1.0
1. Delete 12ns speed bin.
2. Change Icc for Industrial mode.
Item Previous
ICC(Industrial)
8ns
10ns
100mA
85mA
Rev. 2.0
1. Add tBA,tBLZ,tBHZ,tBW AC parematers.
Rev. 3.0
1. Correct read cycle timing diagram(2).
Current
90mA
75mA
Draft Data
May. 11. 2001
June. 18. 2001
September. 9. 2001
December. 18. 2001
Remark
Preliminary
Preliminary
Preliminary
Final
February. 14. 2002
June. 19. 2002
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 3.0
June 2002




K6R1008C1D pdf, 반도체, 판매, 대치품
K6R1016V1D
PIN CONFIGURATION(TOP VIEW)
A0 1
A1 2
A2 3
A3 4
A4 5
CS 6
I/O1 7
I/O2 8
I/O3 9
I/O4 10
Vcc 11
Vss 12
I/O5 13
I/O6 14
I/O7 15
I/O8 16
WE 17
A5 18
A6 19
A7 20
A8 21
N.C 22
SOJ/
TSOP2
44 A15
43 A14
42 A13
41 OE
40 UB
39 LB
38 I/O16
37 I/O15
36 I/O14
35 I/O13
34 Vss
33 Vcc
32 I/O12
31 I/O11
30 I/O10
29 I/O9
28 N.C
27 A12
26 A11
25 A10
24 A9
23 N.C
for AT&T
CMOS SRAM
1 23456
A LB OE A0 A1 A2 N.C
B
I/O1 UB
A3
A4 CS I/O9
C
I/O2 I/O3
A5
A6 I/O11 I/O10
D
Vss I/O4 N.C
A7
I/O12
Vcc
E Vcc I/O5 N.C N.C I/O13 Vss
F I/O7 I/O6 A14 A15 I/O14 I/O15
G I/O8 N.C A12 A13 WE I/O16
H
N.C A8
A9 A10 A11 N.C
48-TBGA ( Top View )
ABSOLUTE MAXIMUM RATINGS*
Parameter
Voltage on Any Pin Relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Commercial
Industrial
Symbol
VIN, VOUT
VCC
Pd
TSTG
TA
TA
Rating
-0.5 to 4.6
-0.5 to 4.6
1
-65 to 150
0 to 70
-40 to 85
Unit
V
V
W
°C
°C
°C
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS (TA= 0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
VCC
VSS
VIH
VIL
Min
3.0
0
2.0
-0.3(2)
Typ
3.3
0
-
-
(1) VIH(Max) = VCC + 2.0V a.c(Pulse Width 8ns) for I 20mA
(2) VIL(Min) = -2.0V a.c(Pulse Width 8ns) for I 20mA.
Max
3.6
0
VCC+0.3(1)
0.8
Unit
V
V
V
V
-4-
Revision 3.0
June 2002

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K6R1008C1D 전자부품, 판매, 대치품
K6R1016V1D
for AT&T
CMOS SRAM
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS
UB, LB
OE
Data out
VCC
Current
High-Z
ICC
ISB
tAA
tCO
tBA
tBLZ(4,5)
tOE
tOLZ
tLZ(4,5)
tPU
50%
tRC
tHZ(3,4,5)
tBHZ(3,4,5)
Valid Data
tOHZ
tDH
tPD
50%
NOTES(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or
VOL levels.
4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to
device.
5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=VIL.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
TIMING WAVEFORM OF WRITE CYCLE(1) (OE =Clock)
Address
OE
CS
UB, LB
WE
Data in
Data out
tWC
tAW
tCW(3)
tWR(5)
tBW
tAS(4)
tWP(2)
High-Z
tOHZ(6)
tDW tDH
Valid Data
High-Z
-7-
Revision 3.0
June 2002

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