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K6R4016V1 데이터시트 PDF




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부품번호 K6R4016V1 기능
기능 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
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K6R4016V1 데이터시트, 핀배열, 회로
K6R4004C1D
Document Title
1Mx4 Bit High Speed Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
PRELIMINARY
CMOS SRAM
RevNo.
Rev. 0.0
Rev. 0.1
History
Initial release with Preliminary.
Change Icc. Isb and Isb1
Item
ICC(Commercial)
ICC(Industrial)
ISB
ISB1
10ns
12ns
15ns
10ns
12ns
15ns
Previous
90mA
80mA
70mA
115mA
100mA
85mA
30mA
10mA
Current
65mA
55mA
45mA
85mA
75mA
65mA
20mA
5mA
Draft Data
Remark
September. 7. 2001 Preliminary
November, 3. 2001 Preliminary
Rev. 0.2
Rev. 0.3
Rev. 1.0
1. Correct AC parameters : Read & Write Cycle mA
2. Delete Low Ver.
3. Delete Data Retention Characteristics
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
ICC(Industrial)
10ns
12ns
Previous
85mA
75mA
Current
75mA
65mA
1. Final datasheet release.
2. Delete 12ns speed bin.
3. Delete UB,LB releated AC characteristics and timing diagram.
4. Correct Read Cycle time waveform(2).
November, 3. 2001 Preliminary
December, 18. 2001 Preliminary
July, 09, 2002
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 1.0
July 2002




K6R4016V1 pdf, 반도체, 판매, 대치품
K6R4004C1D
PRELIMINARY
CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
Parameter
Voltage on Any Pin Relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Commercial
Industrial
Symbol
VIN, VOUT
VCC
PD
TSTG
TA
TA
Rating
-0.5 to VCC+0.5
-0.5 to 7.0
1.0
-65 to 150
0 to 70
-40 to 85
Unit
V
V
W
°C
°C
°C
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
VCC
VSS
VIH
VIL
Min
4.5
0
2.2
-0.5*
Typ
5.0
0
-
-
* The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0V a.c(Pulse Width 8ns) for I 20mA.
*** VIH(Max) = VCC + 2.0V a.c (Pulse Width 8ns) for I 20mA.
Max
5.5
0
VCC+0.5**
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Symbol
ILI
ILO
ICC
Test Conditions
VIN=VSS to VCC
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL, IOUT=0mA
Com.
Ind.
10ns
10ns
Min Max Unit
-2 2 µA
-2 2 µA
- 65
mA
- 75
Standby Current
Output Low Voltage Level
ISB Min. Cycle, CS=VIH
ISB1 f=0MHz, CSVCC-0.2V,
VINVCC-0.2V or VIN0.2V
VOL IOL=8mA
- 20 mA
-5
- 0.4 V
Output High Voltage Level VOH IOH=-4mA
2.4 -
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
CIN
* Capacitance is sampled and not 100% tested.
Test Conditions
VI/O=0V
VIN=0V
MIN
-
-
Max
8
6
Unit
pF
pF
-4-
Rev 1.0
July 2002

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K6R4016V1 전자부품, 판매, 대치품
K6R4004C1D
TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)
PRELIMINARY
CMOS SRAM
Address
OE
CS
WE
Data in
Data out
tWC
tAW
tCW(3)
tWR(5)
tAS(4)
tWP(2)
High-Z
tOHZ(6)
tDW tDH
Valid Data
High-Z(8)
TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)
Address
CS
WE
Data in
Data out
tAS(4)
High-Z
tWC
tAW
tCW(3)
tWP1(2)
tWR(5)
tWHZ(6)
tDW tDH
Valid Data
High-Z(8)
tOW (10) (9)
TIMING WAVEFORM OF WRITE CYCLE(3) (CS=Controlled)
Address
CS
WE
Data in
Data out
tAS(4)
High-Z
High-Z
tLZ
tWC
tAW
tCW(3)
tWP(2)
tWR(5)
tWHZ(6)
tDW
Valid Data
tDH
High-Z
High-Z(8)
-7-
Rev 1.0
July 2002

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