Datasheet.kr   

K6T0808C1D-F 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 K6T0808C1D-F은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 K6T0808C1D-F 자료 제공

부품번호 K6T0808C1D-F 기능
기능 32Kx8 bit Low Power CMOS Static RAM
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


K6T0808C1D-F 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 9 페이지수

미리보기를 사용할 수 없습니다

K6T0808C1D-F 데이터시트, 핀배열, 회로
K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No History
0.0 Initial draft
0.1 First revision
- KM62256DL/DLI ISB1 = 100 50µA
KM62256DL-L ISB1 = 20 10µA
KM62256DLI-L ISB1 = 50 15µA
- CIN = 6 8pF, CIO = 8 10pF
- KM62256D-4/5/7 Family
tOH = 5 10ns
- KM62256DL/DLI IDR = 5030µA
KM62256DL-L/DLI-L IDR = 30 15µA
1.0 Finalize
- Remove ICC write value
- Improved operating current
ICC2 = 70 60mA
- Improved standby current
KM62256DL/DLI ISB1 = 50 30µA
KM62256DL-L ISB1 = 10 5µA
KM62256DLI-L ISB1 = 15 5µA
- Improved data retention current
KM62256DL/DLI IDR = 30 5µA
KM62256DL-L/DLI-L IDR = 15 3µA
- Remove 45ns part from commercial product and 100ns part
from industrial product.
Replace test load 100pF to 50pF for 55ns part
CMOS SRAM
Draft Data
May 18, 1997
April 1, 1997
Remark
Design target
Preliminily
November 11, 1997 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision 1.0
November 1997




K6T0808C1D-F pdf, 반도체, 판매, 대치품
K6T0808C1D Family
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note:
1. Commercial Product : TA=0 to 70°C, otherwise specified
Industrial Product : TA=-40 to 85°C, otherwise specified
2. Overshoot : VCC+3.0V in case of pulse width30ns
3. Undershoot : -3.0V in case of pulse width30ns
4. Overshoot and undershoot are sampled, not 100% tested
Min
4.5
0
2.2
-0.53)
CMOS SRAM
Typ Max Unit
5.0 5.5
V
00V
- Vcc+0.5V2) V
- 0.8 V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled not, 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1 - 1 µA
Output leakage current
ILO CS=VIH or OE=VIH or WE=VIL, VIO=VSS to Vcc
-1 - 1 µA
Operating power supply current ICC IIO=0mA, CS=VIL, VIN=VIH or VIL, Read
- 5 10 mA
Average operating current
ICC1
Cycle time=1µs, 100% duty, IIO=0mA
CS0.2V, VIN0.2V, VINVcc -0.2V
Read
Write
-
25
mA
- 20
ICC2 Cycle time=Min,100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL - 45 60 mA
Output low voltage
VOL IOL=2.1mA
- - 0.4 V
Output high voltage
VOH IOH=-1.0mA
2.4 - - V
Standby Current(TTL)
ISB CS=VIH, Other inputs=VIH or VIL
- - 1 mA
Standby Current (CMOS)
ISB1 CSVcc-0.2V, Other inputs=0~Vcc
Low Power
Low Low Power
-
-
1 30 µA
0.2 5 µA
Revision 1.0
November 1997

4페이지










K6T0808C1D-F 전자부품, 판매, 대치품
K6T0808C1D Family
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS
WE
Data in
Data out
tAS(3)
Data Undefined
tWC
tCW(2)
tAW
tWP(1)
tWR(4)
tWHZ
tDW tDH
Data Valid
tOW
TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled)
Address
CS
tAS(3)
tWC
tCW(2)
tAW
tWP(1)
tWR(4)
WE
Data in
tDW tDH
Data Valid
CMOS SRAM
Data out
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE
going low : A write end at the earliest transition among CS going high and WE going high, tWP is measured from the begining of write
to the end of write.
2. tCW is measured from the CS going low to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.
DATA RETENTION WAVE FORM
CS controlled
VCC
4.5V
tSDR
Data Retention Mode
tRDR
2.2V
VDR
CS
GND
CSVCC - 0.2V
Revision 1.0
November 1997

7페이지


구       성 총 9 페이지수
다운로드[ K6T0808C1D-F.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
K6T0808C1D-B

32Kx8 bit Low Power CMOS Static RAM

Samsung semiconductor
Samsung semiconductor
K6T0808C1D-DB55

32Kx8 bit Low Power CMOS Static RAM

Samsung semiconductor
Samsung semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵