|
|
|
부품번호 | K6T1008C2E-DL70 기능 |
|
|
기능 | 128Kx8 bit Low Power CMOS Static RAM | ||
제조업체 | Samsung semiconductor | ||
로고 | |||
전체 10 페이지수
K6T1008C2E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No. History
0.0 Design target
1.0 Finalize
- Improve tWP form 55ns to 50ns for 70ns product.
- Remove 55ns speed bin from industrial product.
1.01
Errata correction
2.0 Revise
3.0 Revise
- Add 55ns parts to industrial products.
CMOS SRAM
Draft Data
October 12, 1998
August 30, 1999
Remark
Preliminary
Final
December 1, 1999
February 14, 2000
March 3, 2000
Final
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 3.0
March 2000
K6T1008C2E Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Product
Supply voltage
Vcc
K6T1008C2E Family
Ground
Vss
All Family
Input high voltage
VIH
K6T1008C2E Family
Input low voltage
VIL
K6T1008C2E Family
Note:
1. Commercial Product: TA=0 to 70°C
Industrial Product: TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+3.0V in case of pulse width≤30ns.
3. Undershoot: -3.0V in case of pulse width≤30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Min
4.5
0
2.2
-0.53)
Typ Max Unit
5.0 5.5 V
0 0V
- Vcc+0.52) V
- 0.8 V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 6 pF
- 8 pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI VIN=Vss to Vcc
Output leakage current
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
Operating power supply current ICC IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL, Read
Min Typ Max Unit
-1 - 1 µA
-1 - 1 µA
- - 10 mA
Average operating current
ICC1 Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V - - 7 mA
or VIN≥VCC-0.2V
ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL
- - 50 mA
Output low voltage
VOL IOL=2.1mA
- - 0.4 V
Output high voltage
VOH IOH=-1.0mA
2.4 - - V
Standby Current(TTL)
ISB CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
- - 3 mA
Standby Current(CMOS)
ISB1 CS1≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V, Other inputs=0~Vcc - - 501) µA
1. 50µA for Low power product, in case of Low Low power products are comercial=10µA, industrial=15µA.
4 Revision 3.0
March 2000
4페이지 K6T1008C2E Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS1
CS2
WE
Data in
Data out
tAS(3)
Data Undefined
tWC
tCW(2)
tWR(4)
tAW
tCW(2)
tWP(1)
tWHZ
tDW tDH
Data Valid
tOW
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled)
Address
CS1
tAS(3)
tWC
tCW(2)
tAW
tWR(4)
CS2
tWP(1)
WE
Data in
tDW tDH
Data Valid
Data out
High-Z
High-Z
7 Revision 3.0
March 2000
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ K6T1008C2E-DL70.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
K6T1008C2E-DL70 | 128Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |