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부품번호 | K6X1008T2D-TB85 기능 |
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기능 | 128Kx8 bit Low Power CMOS Static RAM | ||
제조업체 | Samsung semiconductor | ||
로고 | |||
K6X1008T2D Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial draft
Draft Data
July 15, 2002
Remark
Preliminary
0.1 Revised
December 4, 2002
Preliminary
- Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type.
- Added Commercial product.
- Added 55ns product( Vcc = 3.0V~3.6V)
0.2 Revised
- Added Lead Free 32-SOP-525 Product
- Added Lead Free 32-TSOP1-0820F Product
June 23, 2003
Preliminary
1.0 Finalized
- Changed ICC from 3mA to 2mA
- Changed ICC2 from 25mA to 20mA
- Changed ISB1(Commercial) from 10µA to 6µA
- Changed ISB1(industrial) from 10µA to 6µA
- Changed ISB1(Automotive) from 20µA to 10µA
- Changed IDR(Commercial) from 10µA to 6µA
- Changed IDR(industrial) from 10µA to 6µA
- Changed IDR(Automotive) from 20µA to 10µA
September 16, 2003 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2003
K6X1008T2D Family
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note:
1. Commercial Product: TA=0 to 70°C, Otherwise specified
. Industrial Product: TA=-40 to 85°C, Otherwise specified
Automotive Product: TA=-40 to 125°C, Otherwise specified
2. Overshoot: Vcc+3.0V in case of pulse width≤30ns.
3. Undershoot: -3.0V in case of pulse width≤30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Min
2.7
0
2.2
-0.23)
CMOS SRAM
Typ
3.0/3.3
0
-
-
Max
3.6
0
Vcc+0.22)
0.6
Unit
V
V
V
V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI VIN=Vss to Vcc
Output leakage current
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
Operating power supply current ICC IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL, Read
Min Typ Max Unit
-1 - 1 µA
-1 - 1 µA
- - 2 mA
Average operating current
ICC1 Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V, CS2≥Vcc-0.2V,
VIN≤0.2V or VIN≥VCC-0.2V
ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH,
VIN=VIH or VIL
-
-
- 3 mA
- 20 mA
Output low voltage
VOL IOL=2.1mA
- - 0.4 V
Output high voltage
VOH IOH=-1.0mA
2.4 - - V
Standby Current(TTL)
Standby Current(CMOS)
ISB CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
ISB1
CS1≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V,
Other inputs=0~Vcc
K6X1008T2D-B
K6X1008T2D-F
K6X1008T2D-Q
-
-
-
-
- 0.3 mA
- 6 µA
- 6 µA
- 10 µA
4 Revision 1.0
September 2003
4페이지 K6X1008T2D Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS1
CS2
WE
Data in
Data out
tAS(3)
Data Undefined
tWC
tCW(2)
tWR(4)
tAW
tCW(2)
tWP(1)
tWHZ
tDW tDH
Data Valid
tOW
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled)
Address
CS1
tAS(3)
tWC
tCW(2)
tAW
tWR(4)
CS2
tWP(1)
WE
Data in
tDW tDH
Data Valid
Data out
High-Z
High-Z
7 Revision 1.0
September 2003
7페이지 | |||
구 성 | 총 9 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
K6X1008T2D-TB85 | 128Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |