Datasheet.kr   

K6X4008C1F-MB70 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 K6X4008C1F-MB70은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 K6X4008C1F-MB70 자료 제공

부품번호 K6X4008C1F-MB70 기능
기능 512Kx8 bit Low Power full CMOS Static RAM
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


K6X4008C1F-MB70 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 9 페이지수

미리보기를 사용할 수 없습니다

K6X4008C1F-MB70 데이터시트, 핀배열, 회로
K6X4008C1F Family
Document Title
512Kx8 bit Low Power full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
- Added Commercial Product.
1.0 Finalized
- Added Lead Free 32-SOP-525 Product
- Changed ICC from 10mA to 5mA
- Changed ICC1 from 8mA to 7mA
- Changed ICC2 from 40mA to 30mA
- Changed ISB from 3mA to 0.4mA
- Changed IDR(Commercial) from 15µA to 12µA
- Changed IDR(industrial) from 20µA to 12µA
- Changed IDR(Automotive) from 30µA to 25µA
CMOS SRAM
Draft Date
July 30, 2002
Remark
Preliminary
November 30, 2002 Preliminary
September 16, 2003 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2003




K6X4008C1F-MB70 pdf, 반도체, 판매, 대치품
K6X4008C1F Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
VIH
VIL
Note:
1.Commercial Product: TA=0 to 70°C, otherwise specified
Industrial Product: TA=-40 to 85°C, otherwise specified
Automotive Product: TA=-40 to 125°C, otherwise specified
2. Overshoot: VCC+3.0V in case of pulse width 30ns
3. Undershoot: -3.0V in case of pulse width 30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Min
4.5
0
2.2
-0.53)
Typ Max Unit
5.0 5.5
V
00V
-
Vcc+0.52)
V
- 0.8 V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI VIN=Vss to Vcc
Output leakage current
ILO CS=VIH or OE=VIH or WE=VIL, VIO=Vss to Vcc
Operating power supply current ICC IIO=0mA, CS=VIL, VIN=VIL or VIH, Read
Average operating current
ICC1
Cycle time=1µs, 100% duty, IIO=0mA
CS0.2V, VIN0.2V or VINVcc-0.2V
Min Typ Max Unit
-1 -
1 µA
-1 -
1 µA
- - 5 mA
- - 7 mA
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL - - 30 mA
VOL IOL=2.1mA
- - 0.4 V
VOH IOH=-1.0mA
2.4 - - V
ISB CS=VIH, Other inputs = VIL or VIH
- - 0.4 mA
ISB1 CSVcc-0.2V, Other inputs=0~Vcc
K6X4008C1F-B
K6X4008C1F-F
-
-
- 20 µA
-
K6X4008C1F-Q -
- 30 µA
4 Revision 1.0
September 2003

4페이지










K6X4008C1F-MB70 전자부품, 판매, 대치품
K6X4008C1F Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS
WE
Data in
Data out
tAS(3)
Data Undefined
tWC
tCW(2)
tAW
tWP(1)
tWR(4)
tWHZ
tDW tDH
Data Valid
tOW
TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled)
Address
CS
tAS(3)
tWC
tCW(2)
tAW
tWP(1)
tWR(4)
WE
Data in
tDW tDH
Data Valid
Data out
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE
going low : A write end at the earliest transition among CS going high and WE going high, tWP is measured from the begining of write
to the end of write.
2. tCW is measured from the CS going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends with CS or WE going high.
DATA RETENTION WAVE FORM
CS controlled
VCC
4.5V
tSDR
Data Retention Mode
tRDR
2.2V
VDR
CS
GND
CSVCC - 0.2V
7
Revision 1.0
September 2003

7페이지


구       성 총 9 페이지수
다운로드[ K6X4008C1F-MB70.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
K6X4008C1F-MB70

512Kx8 bit Low Power full CMOS Static RAM

Samsung semiconductor
Samsung semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵