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K6X4008T1F-B 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 K6X4008T1F-B은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 K6X4008T1F-B 자료 제공

부품번호 K6X4008T1F-B 기능
기능 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


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K6X4008T1F-B 데이터시트, 핀배열, 회로
K6X4008T1F Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Data
July 29, 2002
0.1 Revised
- Added 55ns product( Vcc = 3.0V~3.6V)
October 14, 2002
0.2 Revised
- Added Commercial product
December 2, 2002
0.21
Revised
March 26, 2003
- Errata correction : corrected commercial product family name from
K6X4008T1F-F to K6X4008T1F-B in PRODUCT FAMILY.
1.0 Finalized
- Changed ICC from 4mA to 2mA
- Changed ICC1 from 4mA to 3mA
- Changed ICC2 from 30mA to 25mA
- Changed ISB1(Commercial) from 15µA to 10µA
- Changed ISB1(industrial) from 20µA to 10µA
- Changed ISB1(Automotive) from 30µA to 20µA
- Changed IDR(Commercial) from 15µA to 10µA
- Changed IDR(industrial) from 20µA to 10µA
- Changed IDR(Automotive) from 30µA to 20µA
September 16, 2003
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2003




K6X4008T1F-B pdf, 반도체, 판매, 대치품
K6X4008T1F Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Symbol
Vcc
Min
2.7
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note:
1. Commercial Product: TA=0 to 70°C, otherwise specified
Industrial Product: TA=-40 to 85°C, otherwise specified
Automotive Product: TA=-40 to 125°C, otherwise specified
2. Overshoot: VCC+2.0V in case of pulse width 30ns
3. Undershoot: -2.0V in case of pulse width 30ns
4. Overshoot and undershoot are sampled, not 100% tested.
0
2.2
-0.23)
Typ
3.0/3.3
0
-
-
Max
3.6
0
Vcc+0.22)
0.6
Unit
V
V
V
V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Symbol
Input capacitance
CIN
Input/Output capacitance
CIO
1. Capacitance is sampled, not 100% tested.
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI VIN=Vss to Vcc
Output leakage current
ILO CS=VIH or OE=VIH or WE=VIL VIO=Vss to Vcc
Operating power supply current ICC IIO=0mA, CS=VIL, VIN=VIL or VIH, Read
Average operating current
ICC1
ICC2
Cycle time=1µs, 100% duty, IIO=0mA CS0.2V,VIN0.2V or VINVcc-0.2V
Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL
Output low voltage
VOL IOL=2.1mA
Output high voltage
VOH IOH=-1.0mA
Standby Current(TTL)
ISB CS=VIH, Other inputs = VIL or VIH
K6X4008T1F-B
Standby Current (CMOS)
ISB1 CSVcc-0.2V, Other inputs=0~Vcc
K6X4008T1F-F
K6X4008T1F-Q
Min Typ Max Unit
-1 - 1 µA
-1 - 1 µA
- - 2 mA
- - 3 mA
- - 25 mA
- - 0.4 V
2.4 -
-V
- - 0.3 mA
- - 10 µA
- - 10 µA
- - 20 µA
4 Revision 1.0
September 2003

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K6X4008T1F-B 전자부품, 판매, 대치품
K6X4008T1F Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS
WE
Data in
Data out
tAS(3)
Data Undefined
tWC
tCW(2)
tAW
tWP(1)
tWR(4)
tWHZ
tDW tDH
Data Valid
tOW
TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled)
Address
CS
tAS(3)
tWC
tCW(2)
tAW
tWP(1)
tWR(4)
WE
Data in
tDW tDH
Data Valid
Data out
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE
going low : A write end at the earliest transition among CS going high and WE going high, tWP is measured from the begining of write
to the end of write.
2. tCW is measured from the CS going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends with CS or WE going high.
DATA RETENTION WAVE FORM
CS controlled
VCC
2.7V
tSDR
Data Retention Mode
tRDR
2.2V
VDR
CS
GND
CSVCC - 0.2V
7 Revision 1.0
September 2003

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관련 데이터시트

부품번호상세설명 및 기능제조사
K6X4008T1F-B

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

Samsung semiconductor
Samsung semiconductor
K6X4008T1F-F

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

Samsung semiconductor
Samsung semiconductor

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