|
|
|
부품번호 | K6X4016C3F-TQ55 기능 |
|
|
기능 | 256Kx16 bit Low Power full CMOS Static RAM | ||
제조업체 | Samsung semiconductor | ||
로고 | |||
K6X4016C3F Family
Document Title
256Kx16 bit Low Power full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
Added Commercial Product.
Deleted 44-TSOP2-400R Package Type.
1.0 Finalized
- Changed ICC from 10mA to 5mA
- Changed ICC1 from 10mA to 7mA
- Changed ICC2 from 50mA to 30mA
- Changed ISB from 3mA to 0.4mA
- Changed IDR(Commercial) from 15µA to 12µA
- Changed IDR(industrial) from 20µA to 12µA
- Changed IDR(Automotive) from 30µA to 25µA
CMOS SRAM
Draft Date
July 26, 2002
Remark
Preliminary
November 29, 2002 Preliminary
September 16, 2003 final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2003
K6X4016C3F Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
VIH
VIL
Note:
1. Commercial Product: TA=0 to 70°C, otherwise specified
Industrial Product: TA=-40 to 85°C, otherwise specified
Automotive Product TA=-40 to 125°C, otherwise specified
2. Overshoot: VCC+3.0V in case of pulse width ≤ 30ns
3. Undershoot: -3.0V in case of pulse width ≤ 30ns
4. Overshoot and undershoot are sampled, not 100% tested
Min
4.5
0
2.2
-0.53)
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Typ Max
5.0 5.5
00
- Vcc+0.52)
- 0.8
Min Max
-8
- 10
Unit
V
V
V
V
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI VIN=Vss to Vcc
Output leakage current
ILO CS=VIH or OE=VIH or WE=VIL, VIO=Vss to Vcc
Operating power supply current
Average operating current
ICC IIO=0mA, CS=VIL, VIN=VIL or VIH, Read
ICC1
Cycle time=1µs, 100% duty, IIO=0mA
CS≤0.2V, VIN≥0.2V or VIN≥Vcc-0.2V
ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS=VIL,
VIN=VIH or VIL
Output low voltage
VOL IOL=2.1mA
Output high voltage
VOH IOH=-1.0mA
Standby Current(TTL)
ISB CS=VIH, Other inputs = VIL or VIH
Standby Current(CMOS)
ISB1 CS≥Vcc-0.2V, Other inputs=0~Vcc
K6X4016C3F-B
K6X4016C3F-F
K6X4016C3F-Q
Min Typ Max Unit
-1 - 1 µA
-1 - 1 µA
- - 5 mA
- - 7 mA
- - 30 mA
- - 0.4 V
2.4 - - V
- - 0.4 mA
- - 20 µA
--
- - 30 µA
4 Revision 1.0
September 2003
4페이지 K6X4016C3F Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS
UB, LB
WE
Data in
Data out
tAS(3)
High-Z
Data Undefined
tWC
tCW(2)
tAW
tBW
tWP(1)
tWR(4)
tWHZ
tDW tDH
Data Valid
tOW
High-Z
TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled)
Address
CS
UB, LB
tAS(3)
tWC
tCW(2)
tAW
tBW
tWP(1)
tWR(4)
WE
Data in
tDW tDH
Data Valid
Data out
High-Z
High-Z
7 Revision 1.0
September 2003
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ K6X4016C3F-TQ55.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
K6X4016C3F-TQ55 | 256Kx16 bit Low Power full CMOS Static RAM | Samsung semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |