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K6X4016T3F-B 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 K6X4016T3F-B은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 K6X4016T3F-B 자료 제공

부품번호 K6X4016T3F-B 기능
기능 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


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K6X4016T3F-B 데이터시트, 핀배열, 회로
K6X4016T3F Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 Initial draft
Draft Date
July 29, 2002
0.1 Revised
- Added Commercial product
- Deleted 44-TSOP2-400R Package Type.
- Added 55ns product(@ 3.0V~3.6V)
December 2, 2002
1.0 Finalized
August 8, 2003
Revised
- Changed ICC(Operating power supply current) from 4mA to 2mA
- Changed ICC1(Average operating current) from 4mA to 3mA
- Changed ICC2(Average operating current) from 40mA to 25mA
- Changed ISB1(Standby Current(CMOS), Commercial)
from 15µA to 10µA
- Changed ISB1(Standby Current(CMOS), Industrial)
from 20µA to 10µA
- Changed ISB1(Standby Current(CMOS), Automotive)
from 30µA to 20µA
- Changed IDR(Data retention current, Commercial)
from 15µA to 10µA
- Changed IDR(Data retention current, Industrial)
from 20µA to 10µA
- Changed IDR(Data retention current, Automotive)
from 30µA to 20µA
Remark
Preliminary
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
August 2003




K6X4016T3F-B pdf, 반도체, 판매, 대치품
K6X4016T3F Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Supply voltage
Item
Symbol
Vcc
Min
2.7
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note:
1. Commercial Product: TA=0 to 70°C, otherwise specified.
Industrial Product: TA=-40 to 85°C, otherwise specified.
Automotive Product: TA=-40 to 125°C, otherwise specified.
2. Overshoot: VCC+2.0V in case of pulse width 30ns.
3. Undershoot: -2.0V in case of pulse width 30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
0
2.2
-0.23)
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Typ
3.0/3.3
0
-
-
Min
-
-
Max
3.6
0
Vcc+0.22)
0.6
Unit
V
V
V
V
Max Unit
8 pF
10 pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI VIL=Vss to Vcc
Output leakage current
ILO CS=VIH or OE=VIH or WE=VIL VIO=Vss to Vcc
Operating power supply current ICC IIO=0mA, CS=VIL, VIN=VIL or VIH, Read
Average operating current
ICC1
Cycle time=1µs, 100% duty, IIO=0mA CS0.2V,
VIN0.2V or VINVcc-0.2V
ICC2 Cycle time=Min2), 100% duty, IIO=0mA, CS=VIL,
VIN=VIH or VIL
Output low voltage
VOL IOL=2.1mA
Output high voltage
VOH IOH=-1.0mA
Standby Current(TTL)
ISB CS=VIH, Other inputs=VIL or VIH
Standby Current(CMOS)
ISB1
CSVcc-0.2V, Other
inputs=0~Vcc
K6X4016T3F-B
K6X4016T3F-F
K6X4016T3F-Q
Min Typ Max Unit
-1 - 1 µA
-1 - 1 µA
- - 2 mA
- - 3 mA
- - 25 mA
- - 0.4 V
2.4 - - V
- - 0.3 mA
- - 10 µA
- - 10 µA
- - 20 µA
4 Revision 1.0
August 2003

4페이지










K6X4016T3F-B 전자부품, 판매, 대치품
K6X4016T3F Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS
UB, LB
WE
Data in
Data out
tAS(3)
High-Z
Data Undefined
tWC
tCW(2)
tAW
tBW
tWP(1)
tWR(4)
tWHZ
tDW tDH
Data Valid
tOW
High-Z
TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled)
Address
CS
UB, LB
tAS(3)
tWC
tCW(2)
tAW
tBW
tWP(1)
tWR(4)
WE
Data in
tDW tDH
Data Valid
Data out
High-Z
High-Z
7 Revision 1.0
August 2003

7페이지


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관련 데이터시트

부품번호상세설명 및 기능제조사
K6X4016T3F-B

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

Samsung semiconductor
Samsung semiconductor
K6X4016T3F-F

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

Samsung semiconductor
Samsung semiconductor

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