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부품번호 | K6X8008C2B 기능 |
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기능 | 1Mx8 bit Low Power and Low Voltage CMOS Static RAM | ||
제조업체 | Samsung semiconductor | ||
로고 | |||
전체 9 페이지수
K6X8008C2B Family
Document Title
1Mx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
- Deleted 44-TSOP2-400R package type.
- Added Commercial product.
1.0 Finalized
- Changed ICC from 10mA to 6mA
- Changed ICC1 from 10mA to 7mA
- Changed ICC2 from 50mA to 35mA
- Changed ISB from 3mA to 0.4mA
- Changed ISB1(Commercial) from 40µA to 25µA
- Changed ISB1(industrial) from 40µA to 25µA
- Changed ISB1(Automotive) from 50µA to 40µA
- Changed IDR(Commercial) from 30µA to 15µA
- Changed IDR(industrial) from 30µA to 15µA
- Changed IDR(Automotive) from 40µA to 30µA
Draft Date
October 31, 2002
Remark
Preliminary
December 11, 2002 Preliminary
September 16, 2003 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2003
K6X8008C2B Family
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Product
Supply voltage
Vcc
K6X8008C2B Family
Ground
Vss
All Family
Input high voltage
VIH
K6X8008C2B Family
Input low voltage
VIL
K6X8008C2B Family
Note:
1. Commercial Product: TA=0 to 70°C, otherwise specified.
Industrial Product: TA=-40 to 85°C, otherwise specified.
Automotive Product: TA=-40 to 125°C, otherwise specified.
2. Overshoot: VCC+3.0V in case of pulse width ≤30ns.
3. Undershoot: -3.0V in case of pulse width ≤30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CMOS SRAM
Min
4.5
0
2.2
-0.53)
Typ Max Unit
5.0 5.5
V
0 0V
- Vcc+0.52) V
- 0.8 V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1 - 1 µA
Output leakage current
ILO CS1=VIH, CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
-1 - 1 µA
Operating power supply current ICC IIO=0mA, CS1=VIL, CS2=VIH, WE=VIH, VIN=VIH or VIL
- - 6 mA
Average operating current
ICC1 Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V,
CS2≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
ICC2 Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH,
VIN=VIL or VIH
- - 7 mA
- - 35 mA
Output low voltage
VOL IOL = 2.1mA
- - 0.4 V
Output high voltage
VOH IOH = -1.0mA
2.4 - - V
Standby Current(TTL)
ISB CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
- - 0.4 mA
Standby Current(CMOS)
Other input =0~Vcc,
ISB1 1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V (CS1 con-
trolled) or 2) 0V≤CS2≤0.2V(CS2 controlled)
K6X8008C2B-B -
K6X8008C2B-F -
K6X8008C2B-Q -
- 25
- 25 µA
- 40
4 Revision 1.0
September 2003
4페이지 K6X8008C2B Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS1
CS2
WE
Data in
Data out
tAS(3)
Data Undefined
tWC
tCW(2)
tWR(4)
tAW
tCW(2)
tWP(1)
tWHZ
tDW tDH
Data Valid
tOW
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled)
Address
CS1
tAS(3)
tWC
tCW(2)
tAW
tWR(4)
CS2
tWP(1)
WE
Data in
tDW tDH
Data Valid
Data out
High-Z
High-Z
7 Revision 1.0
September 2003
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ K6X8008C2B.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
K6X8008C2B | 1Mx8 bit Low Power and Low Voltage CMOS Static RAM | Samsung semiconductor |
K6X8008C2B-B | 1Mx8 bit Low Power and Low Voltage CMOS Static RAM | Samsung semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |