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Datasheet K6X8016T3B-Q Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K6X8016T3B-Q | 512Kx16 bit Low Power Full CMOS Static RAM K6X8016T3B Family
Document Title
512Kx16 bit Low Power Full CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 0.1 Initial draft Revised - Deleted 44-TSOP2-400R package type. Finalized - Changed ICC1 from 4mA to 3mA - Changed ICC2 from 45mA to 30mA - Changed ISB1(industrial) from |  Samsung semiconductor | cmos |
K6X Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K6X0808C1D | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | | |
| 2 | K6X0808C1D-DF55 | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | | |
| 3 | K6X0808C1D-DF70 | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | | |
| 4 | K6X0808C1D-F | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | | |
| 5 | K6X0808C1D-GF55 | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | | |
| 6 | K6X0808C1D-GF70 | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | | |
| 7 | K6X0808C1D-GQ55 | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | |
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