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K7A403209B 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 K7A403209B은 전자 산업 및 응용 분야에서
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부품번호 K7A403209B 기능
기능 128Kx36/x32 & 256Kx18 Synchronous SRAM
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


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K7A403209B 데이터시트, 핀배열, 회로
K7A403600B
K7A403200B
K7A401800B
128Kx36/x32 & 256Kx18 Synchronous SRAM
Document Title
128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No History
0.0 1. Initial draft
0.1 1. Changed DC parameters
Icc ; from 350mA to 290mA at -16,
from 330mA to 270mA at -15,
from 300mA to 250mA at -14,
ISB1 ; from 100mA to 80mA
0.2 1. Delete Pass-Through
0.3 1. Add x32 org. and industrial temperature
1.0 1. Final spec release
2. Changed Pin Capacitance
- Cin ; from 5pF to 4pF
- Cout ; from 7pF to 6pF
Draft Date
May. 15. 2001
June. 12. 2001
Remark
Preliminary
Preliminary
June.25. 2001
Aug. 11. 2001
Nov. 15. 2001
Preliminary
Preliminary
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - Nov 2001
Rev 1.0




K7A403209B pdf, 반도체, 판매, 대치품
K7A403600B
K7A401800B
128Kx36/x32 & 256Kx18 Synchronous SRAM
PIN CONFIGURATION(TOP VIEW)
DQPc/NC
DQc0
DQc1
VDDQ
VSSQ
DQc2
DQc3
DQc4
DQc5
VSSQ
VDDQ
DQc6
DQc7
N.C.
VDD
N.C.
VSS
DQd0
DQd1
VDDQ
VSSQ
DQd2
DQd3
DQd4
DQd5
VSSQ
VDDQ
DQd6
DQd7
DQPd/NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7A403600B(128Kx36)
K7A403200B(128Kx32)
80 DQPb/NC
79 DQb7
78 DQb6
77 VDDQ
76 VSSQ
75 DQb5
74 DQb4
73 DQb3
72 DQb2
71 VSSQ
70 VDDQ
69 DQb1
68 DQb0
67 VSS
66 N.C.
65 VDD
64 ZZ
63 DQa7
62 DQa6
61 VDDQ
60 VSSQ
59 DQa5
58 DQa4
57 DQa3
56 DQa2
55 VSSQ
54 VDDQ
53 DQa1
52 DQa0
51 DQPa/NC
PIN NAME
SYMBOL
A0 - A16
ADV
ADSP
ADSC
CLK
CS1
CS2
CS2
WEx
(x=a,b,c,d)
OE
GW
BW
ZZ
LBO
PIN NAME
TQFP PIN NO.
Address Inputs
32,33,34,35,36,37
44,45,46,47,48,49
50,81,82,99,100
Burst Address Advance 83
Address Status Processor 84
Address Status Controller 85
Clock
89
Chip Select
98
Chip Select
97
Chip Select
92
Byte Write Inputs
93,94,95,96
Output Enable
Global Write Enable
Byte Write Enable
Power Down Input
Burst Mode Control
86
88
87
64
31
SYMBOL
PIN NAME
VDD Power Supply(+3.3V)
VSS Ground
N.C.
No Connect
DQa0~a7
DQb0~b7
DQc0~c7
DQd0~d7
DQPa~Pd
/NC
VDDQ
Data Inputs/Outputs
Output Power Supply
(2.5V or 3.3V)
Output Ground
VSSQ
TQFP PIN NO.
15,41,65,91
17,40,67,90
14,16,38,39,42,43,66
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
- 4 - Nov 2001
Rev 1.0

4페이지










K7A403209B 전자부품, 판매, 대치품
K7A403600B
K7A403200B
K7A401800B
128Kx36/x32 & 256Kx18 Synchronous SRAM
TRUTH TABLES
SYNCHRONOUS TRUTH TABLE
CS1 CS2 CS2 ADSP ADSC ADV WRITE CLK ADDRESS ACCESSED
HXXXL X X
N/A
L LXLXX X
N/A
LXHLXX X
N/A
L LXXLX X
N/A
LXHXL X X
N/A
LHL LXX X
External Address
LHLHLX L
External Address
LHLHLX H
External Address
XXXHHL H
Next Address
HXXXHL H
Next Address
XXXHHL L
Next Address
HXXXHL L
Next Address
XXXHHH H
Current Address
HXXXHH H
Current Address
XXXHHH L
Current Address
HXXXHH L
Current Address
Notes : 1. X means "Dont Care". 2. The rising edge of clock is symbolized by .
3. WRITE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
4. Operation finally depends on status of asynchronous input pins(ZZ and OE).
OPERATION
Not Selected
Not Selected
Not Selected
Not Selected
Not Selected
Begin Burst Read Cycle
Begin Burst Write Cycle
Begin Burst Read Cycle
Continue Burst Read Cycle
Continue Burst Read Cycle
Continue Burst Write Cycle
Continue Burst Write Cycle
Suspend Burst Read Cycle
Suspend Burst Read Cycle
Suspend Burst Write Cycle
Suspend Burst Write Cycle
WRITE TRUTH TABLE( x36/32)
GW
BW
WEa
WEb
WEc
WEd
HHXXXX
H L HHHH
HL LHHH
H L H L HH
HLHHL L
HL L L L L
LXXXXX
Notes : 1. X means "Dont Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK().
OPERATION
READ
READ
WRITE BYTE a
WRITE BYTE b
WRITE BYTE c and d
WRITE ALL BYTEs
WRITE ALL BYTEs
WRITE TRUTH TABLE(x18)
GW
BW
WEa
WEb
OPERATION
HHXX
READ
H L HH
READ
HL LH
WRITE BYTE a
HLHL
WRITE BYTE b
HL LL
WRITE ALL BYTEs
LXXX
WRITE ALL BYTEs
Notes : 1. X means "Dont Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK().
- 7 - Nov 2001
Rev 1.0

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관련 데이터시트

부품번호상세설명 및 기능제조사
K7A403209B

128Kx36/x32 & 256Kx18 Synchronous SRAM

Samsung semiconductor
Samsung semiconductor
K7A403209B-QC

128Kx36/x32 & 256Kx18 Synchronous SRAM

Samsung semiconductor
Samsung semiconductor

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