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부품번호 K7I323682M 기능
기능 1Mx36 & 2Mx18 DDRII CIO b2 SRAM
제조업체 Samsung semiconductor
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K7I323682M 데이터시트, 핀배열, 회로
K7I323682M
K7I321882M
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
Document Title
1Mx36-bit, 2Mx18-bit DDRII CIO b2 SRAM
Revision History
Rev. No.
History
Draft Date
0.0 1. Initial document.
0.1 1. Pin name change from DLL to Doff.
2. Vddq range change from 1.5V to 1.5V~1.8V.
October, 22 2001
December, 12 2001
3. Update JTAG test conditions.
4. Reserved pin for high density name change from NC to Vss/SA
5. Delete AC test condition about Clock Input timing Reference Level
6. Delete clock description on page 2 and add HSTL I/O comment
0.2
1. Update current characteristics in DC electrical characteristics
July, 29. 2002
2. Change AC timing characteristics
3. Update JTAG instruction coding and diagrams
0.3 1. Add AC electrical characteristics.
2. Change AC timing characteristics.
Sep. 6. 2002
3. Change DC electrical characteristics(ISB1)
0.4 1. Change the data Setup/Hold time.
2. Change the Access Time.(tCHQV, tCHQX, etc.)
Oct. 7. 2002
3. Change the Clock Cycle Time.(MAX value of tKHKH)
4. Change the JTAG instruction coding.
0.5 1. Change the Boundary scan exit order.
2. Change the AC timing characteristics(-25, -20)
Dec. 16, 2002
3. Correct the Overshoot and Undershoot timing diagrams.
0.6 1. Correct the JTAG ID register definition
Mar. 20, 2003
2. Correct the AC timing parameter (delete the tKHKH Max value)
0.7 1. Change the Maximum Clock cycle time.
2. Correct the 165FBGA package ball size.
April. 4, 2003
0.8 1. Change the operating current parameter.
before after
Oct. 29, 2003
Icc(x36) -25 : 620
700
-20 : 520
600
-16 : 440
500
Icc(x18) -25 : 560
670
-20 : 470
570
-16 : 410
470
Icc(x 8 ) -25 : 540
650
-20 : 450
550
-16 : 390
450
Isb1 -25 : 200
230
-20 : 180
200
-16 : 160
190
1.0 1. Final spec release
2.0 1. Delete the x8 Org. part
2.1 1. Change the operating current parameter
before after
Isb1 -25 : 230
250
-20 : 200
230
-16 : 190
220
Oct. 31, 2003
Dec. 1, 2003
July. 27, 2004
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - July. 2004
Rev 2.1




K7I323682M pdf, 반도체, 판매, 대치품
K7I323682M
K7I321882M
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
PIN CONFIGURATIONS(TOP VIEW) K7I321882M(2Mx18)
1 2 3 4 5 6 7 8 9 10 11
A
CQ VSS/SA* SA
R/W
BW1
K
NC LD SA SA CQ
B NC DQ9 NC SA NC
K
BW0
SA
NC
NC DQ8
C NC NC NC VSS SA SA0 SA VSS NC DQ7 NC
D NC NC DQ10 VSS VSS VSS VSS VSS NC NC NC
E NC
NC
DQ11
VDDQ
VSS
VSS
VSS VDDQ NC
NC DQ6
F
NC
DQ12
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC DQ5
G NC
NC
DQ13
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
Doff
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ4
NC
K NC
NC
DQ14
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC DQ3
L NC DQ15 NC VDDQ VSS VSS VSS VDDQ NC NC DQ2
M NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC DQ1 NC
N NC
NC DQ16 VSS
SA
SA
SA VSS NC
NC
NC
P NC
NC DQ17 SA
SA
C
SA SA NC NC DQ0
R TDO TCK
SA
SA
SA
C
SA SA SA TMS TDI
Notes: 1. * Checked No Connect(NC) or Vss pins are reserved for higher density address, i.e. 2A for 72Mb.
2. BW0 controls write to DQ0:DQ8 and BW1 controls write to DQ9:DQ17.
PIN NAME
SYMBOL
K, K
C, C
CQ, CQ
Doff
SA0
SA
DQ0-17
R/W
LD
BW0, BW1
VREF
ZQ
VDD
VDDQ
VSS
TMS
TDI
TCK
TDO
NC
PIN NUMBERS
6B, 6A
6P, 6R
11A, 1A
1H
6C
3A,9A,10A,4B,8B,5C,7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R
2B,11B,10C,3D,3E,11E,2F,11F,3G,10J,3K,11K,2L,11L
10M,3N,3P,11P
4A
8A
7B, 5A
2H,10H
11H
5F,7F,5G,7G,5H,7H,5J,7J,5K,7K
4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L
2A,4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M-8M,4N,8N
10R
11R
2R
1R
7A,1B,3B,5B,9B,10B,1C,2C,3C,9C,11C,1D,2D,9D,10D,11D
1E,2E,9E,10E,1F,3F,9F,10F,1G,2G,9G,10G,11G
1J,2J,3J,9J,11J,1K,2K,9K,10K,1L,3L,9L,10L
1M,2M,3M,9M,11M,1N,2N,9N,10N,11N,1P,2P,9P,10P
DESCRIPTION
Input Clock
Input Clock for Output Data
Output Echo Clock
DLL Disable when low
Burst Count Address Inputs
Address Inputs
NOTE
1
Data Inputs Outputs
Read, Write Control Pin, Read active
when high
Synchronous Load Pin, bus Cycle
sequence is to be defined when low
Block Write Control Pin,active when low
Input Reference Voltage
Output Driver Impedance Control Input
Power Supply ( 1.8 V )
Output Power Supply ( 1.5V or 1.8V )
Ground
JTAG Test Mode Select
JTAG Test Data Input
JTAG Test Clock
JTAG Test Data Output
2
No Connect
3
Notes: 1. C, C, K or K cannot be set to VREF voltage.
2. When ZQ pin is directly connected to VDD output impedance is set to minimum value and it cannot be connected to ground or left unconnected.
3. Not connected to chip pad internally.
- 4 - July. 2004
Rev 2.1

4페이지










K7I323682M 전자부품, 판매, 대치품
K7I323682M
K7I321882M
LINEAR BURST SEQUENCE TABLE
BURST SEQUENCE
First Address
Second Address
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
Case 1
SA0
0
1
Case 2
SA0
1
0
STATE DIAGRAM
POWER-UP
LOAD
NOP
LOAD
LOAD
LOAD
LOAD NEW ADDRESS
READ
WRITE
LOAD
LOAD
DDR READ
DDR WRITE
Notes: 1. Internal burst counter is fixed as 2-bit linear, i.e. when first address is A0+0, next internal burst address is A0+1.
2. "LOAD" refers to read new address active status with LD=Low, "LOAD" refers to read new address inactive status with LD=High.
3. "READ" refers to read active read status with R/W=High, "WRITE" refers to write active status with R/W=Low
- 7 - July. 2004
Rev 2.1

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K7I323682M

1Mx36 & 2Mx18 DDRII CIO b2 SRAM

Samsung semiconductor
Samsung semiconductor

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