Datasheet K7R321884M-FC16 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	K7R321884M-FC16	1Mx36 & 2Mx18 QDRTM II b4 SRAM K7R323684M K7R321884M Document Title 1Mx36-bit, 2Mx18-bit QDR TM II b4 SRAM 1Mx36 & 2Mx18 QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Package dimension modify. P.20 from 13mmx15mm to 15mmx17mm 1. 2. 3. 4. 5. 6. Pin name change from DLL to Doff. Vddq range cha	Samsung semiconductor	ram

K7R Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	K7R161884B	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
2	K7R161884B-FC16	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
3	K7R161884B-FC20	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
4	K7R161884B-FC25	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
5	K7R161884B-FC30	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
6	K7R163684B	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
7	K7R163684B-FC16	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram

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Número de pieza	Descripción	Fabricantes	PDF
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