Datasheet.kr   

K91G08Q0M 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 K91G08Q0M은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 K91G08Q0M 자료 제공

부품번호 K91G08Q0M 기능
기능 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


K91G08Q0M 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 8 페이지수

미리보기를 사용할 수 없습니다

K91G08Q0M 데이터시트, 핀배열, 회로
K817P/ K827PH/ K847PH
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The K817P/ K827PH/ K847PH consist of a photo-
transistor optically coupled to a gallium arsenide
infrared-emitting diode in an 4-lead up to 16-lead
plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Programmable logic controllers, modems, answering
machines, general applications
Features
D Endstackable to 2.54 mm (0.1’) spacing
D DC isolation test voltage VIO = 5 kV
D Low coupling capacitance of typical 0.3 pF
D Current Transfer Ratio (CTR) selected into
groups
D Low temperature coefficient of CTR
D Wide ambient temperature range
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D CSA (C–UL) 1577 recognized,
file number E-76222 – Double Protection
D Coupling System U
Coll. Emitter
Anode Cath.
4 PIN
8 PIN
16 PIN
C
14925
Order Instruction
Ordering Code
K817P
K827PH
K847PH
K817P1
K817P2
K817P3
K817P4
K817P5
K817P6
K817P7
K827P8
K817P9
CTR Ranking
50 to 600%
50 to 600%
50 to 600%
40 to 80%
63 to 125%
100 to 200%
160 to 320%
50 to 150%
100 to 300%
80 to 160%
130 to 260%
200 to 400%
Remarks
4 Pin = Single channel
8 Pin = Dual channel
16 Pin = Quad channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
Rev. A2, 11–Jan–99
177




K91G08Q0M pdf, 반도체, 판매, 대치품
K817P/ K827PH/ K847PH
Vishay Telefunken
Switching Characteristics
Parameter
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
Test Conditions
WVS = 5 V, IC = 2 mA, RL = 100 (see figure 1)
WVS = 5 V, IF = 10 mA, RL = 1 k (see figure 2)
Symbol
td
tr
tf
ts
ton
toff
ton
toff
Typ.
3.0
3.0
4.7
0.3
6.0
5.0
9.0
18.0
Unit
ms
ms
ms
ms
ms
ms
ms
ms
0 IF IF
RG = 50 W
tp = 0.01
T
tp = 50 ms
95 10804
50 W
+5V
IC = 2 mA ;
Adjusted through
input amplitude
100 W
Channel I
Channel II
Oscilloscope
RL = 1 M W
CL = 20 pF
Figure 1. Test circuit, non-saturated operation
IF
0
IC
100%
90%
tp
96 11698
t
IF
0
RG = 50 W
+tp
T
0.01
mtp = 50 s
IF = 10 mA
50 W
95 10843
1 kW
+5V
IC
Channel I
Channel II
Oscilloscope
RL 1 MW
CL 20 pF
Figure 2. Test circuit, saturated operation
10%
0
tr
td
ts tf
t
ton
tp
tion
td
tr
ton (= td + tr)
pulse dura-
delay time
rise time
turn-on time
toff
ts
tf
toff (= ts + tf)
storage time
fall time
turn-off time
Figure 3. Switching times
180 Rev. A2, 11–Jan–99

4페이지










K91G08Q0M 전자부품, 판매, 대치품
Dimensions of K817P. in mm
K817P/ K827PH/ K847PH
Vishay Telefunken
Dimensions of K827PH in mm
weight:
ca. 0.25 g
ycreepage distance: 6 mm
yair path:
6 mm
after mounting on PC board
14789
Rev. A2, 11–Jan–99
weight:
ca. 0.55 g
ycreepage distance: 6 mm
yair path:
6 mm
after mounting on PC board
14784
183

7페이지


구       성 총 8 페이지수
다운로드[ K91G08Q0M.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
K91G08Q0M

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

Samsung semiconductor
Samsung semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵