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K9F1G16Q0M 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 K9F1G16Q0M은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 K9F1G16Q0M 자료 제공

부품번호 K9F1G16Q0M 기능
기능 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


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K9F1G16Q0M 데이터시트, 핀배열, 회로
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M K9F1G16D0M
K9F1G08U0M K9F1G16U0M
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No History
0.0 1. Initial issue
Draft Date
July. 5. 2001
Remark
Advance
0.1 1. Iol(R/B) of 1.8V is changed.
- min. value : 7mA --> 3mA
- Typ. value : 8mA --> 4mA
Nov. 5. 2001
2. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
3. A recovery time of minimum 1µs is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
---> A recovery time of minimum 10µs is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
Dec. 4. 2001
0.2 1. ALE status fault in ’Random data out in a page’ timing diagram(page 19)
is fixed.
0.3 1. tAR1, tAR2 are merged to tAR.(Page11)
(Before revision) min. tAR1 = 10ns , min. tAR2 = 50ns
(After revision) min. tAR = 10ns
2. min. tCLR is changed from 50ns to 10ns.(Page11)
3. min. tREA is changed from 35ns to 30ns.(Page11)
4. min. tWC is changed from 50ns to 45ns.(Page11)
5. tRHZ is devided into tRHZ and tOH.(Page11)
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
6. tCHZ is devided into tCHZ and tOH.(Page11)
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold
Apr. 25. 2002
0.4
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)
Nov. 22.2002
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 36)
0.5 1. The min. Vcc value 1.8V devices is changed.
K9F1GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 6.2003
0.6 Pb-free Package is added.
K9F1G08U0M-FCB0,FIB0
K9F1G08Q0M-PCB0,PIB0
K9F1G08U0M-PCB0,PIB0
K9F1G16U0M-PCB0,PIB0
K9F1G16Q0M-PCB0,PIB0
Mar. 13.2003
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1




K9F1G16Q0M pdf, 반도체, 판매, 대치품
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
PIN CONFIGURATION (TSOP1)
X16 X8
K9F1GXXX0M-YCB0,PCB0/YIB0,PIB0
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP1
Standard Type
12mm x 20mm
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
X8
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
PRE
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
X16
Vss
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
N.C
PRE
Vcc
N.C
N.C
N.C
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
Vss
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220AF
Unit :mm/Inch
20.00±0.20
0.787±0.008
#1 #48
#24
0~8°
0.45~0.75
0.018~0.030
18.40±0.10
0.724±0.004
#25
1.00±0.05
0.039±0.002
01..02407MAX
0.05
0.002
MIN
(
0.50
0.020
)
4

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K9F1G16Q0M 전자부품, 판매, 대치품
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Figure 1-1. K9F1G08X0M (X8) Functional Block Diagram
VCC
VSS
A12 - A27
X-Buffers
Latches
& Decoders
1024M + 32M Bit
NAND Flash
ARRAY
A0 - A11
Y-Buffers
Latches
& Decoders
Command
Command
Register
(2048 + 64)Byte x 65536
Data Register & S/A
Cache Register
Y-Gating
I/O Buffers & Latches
CE Control Logic
RE & High Voltage
WE Generator
Global Buffers
Output
Driver
CLE ALE PRE WP
VCC
VSS
I/0 0
I/0 7
Figure 2-1. K9F1G08X0M (X8) Array Organization
1 Block = 64 Pages
(128K + 4k) Byte
64K Pages
(=1,024 Blocks)
2K Bytes
64 Bytes
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 1024 Blocks
= 1056 Mbits
8 bit
Page Register
2K Bytes
I/O 0 ~ I/O 7
64 Bytes
I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6
1st Cycle
A0
A1
A2
A3
A4
A5
A6
2nd Cycle A8 A9 A10 A11 *L *L *L
3rd Cycle A12 A13 A14 A15 A16 A17 A18
4th Cycle A20 A21 A22 A23 A24 A25 A26
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
I/O 7
A7
*L
A19
A27
Column Address
Column Address
Row Address
Row Address
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
K9F1G16Q0M

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

Samsung semiconductor
Samsung semiconductor
K9F1G16Q0M-PCB0

1Gb Gb 1.8V NAND Flash Errata

Samsung semiconductor
Samsung semiconductor

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