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PDF K9F2808U0C-VCB0 Data sheet ( Hoja de datos )
| Número de pieza | K9F2808U0C-VCB0 | |
| Descripción | 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K9F2808U0C-VCB0 (archivo pdf) en la parte inferior de esta página. Total 33 Páginas | ||
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K9F2808Q0C-DCB0,DIB0 K9F2816Q0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0
K9F2808U0C-YCB0,YIB0 K9F2816U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0 K9F2816U0C-DCB0,DIB0
FLASH MEMORY
Document Title
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 Initial issue.
1.0 TBGA PKG Dimension Change
48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm
2.0 1.A3 Pin assignment of TBGA Package is changed.(Page 4)
(before) NC --> (after) Vss
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32)
3. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 33)
2.1 The min. Vcc value 1.8V devices is changed.
K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Draft Date
Apr. 15th 2002
Sep. 5th 2002
Dec.10th 2002
Mar. 6th 2003
Pb-free Package is added.
2.2
K9F2808U0C-FCB0,FIB0
K9F2808Q0C-HCB0,HIB0
K9F2816U0C-HCB0,HIB0
K9F2816U0C-PCB0,PIB0
K9F2816Q0C-HCB0,HIB0
K9F2808U0C-HCB0,HIB0
K9F2808U0C-PCB0,PIB0
Mar. 13rd 2003
Some AC parameter is changed(K9F28XXQ0C).
2.3
tWC tWH tWP tRC tREH tRP tREA tCEA
Before 45 15 25 50 15 25 30 45
After 60 20 40 60 20 40 40 55
Mar. 26th 2003
2.4 New definition of the number of invalid blocks is added.
May. 24th 2003
(Minimum 502 valid blocks are guaranteed for each contiguous 64Mb
memory space)
Remark
Advance
Advance
Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
1 page  
K9F2808Q0C-DCB0,DIB0 K9F2816Q0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0
K9F2808U0C-YCB0,YIB0 K9F2816U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0 K9F2816U0C-DCB0,DIB0
FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9F2808U0C-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 N.C
47 N.C
46 DNU
45 N.C
44 I/O7
43 I/O6
42 I/O5
41 I/O4
40 N.C
39 DNU
38 N.C
37 Vcc
36 Vss
35 N.C
34 DNU
33 N.C
32 I/O3
31 I/O2
30 I/O1
29 I/O0
28 N.C
27 DNU
26 N.C
25 N.C
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
15.40±0.10
0.70 MAX
0.58±0.04
#1 #48
#24 #25
(0.1Min)
17.00±0.20
5
0.45~0.75
5 Page 
K9F2808Q0C-DCB0,DIB0 K9F2816Q0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0
K9F2808U0C-YCB0,YIB0 K9F2816U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0 K9F2816U0C-DCB0,DIB0
FLASH MEMORY
VALID BLOCK
Parameter
Valid Block Number
Symbol
NVB
Min
1004
Typ.
-
Max
1024
Unit
Blocks
NOTE :
1. The K9F28XXX0C may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase
or program factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction.
3. Minimum 502 valid blocks are guaranteed for each contiguous 64Mb memory space.
AC TEST CONDITION
(K9F28XXX0C-XCB0 :TA=0 to 70°C, K9F28XXX0C-XIB0:TA=-40 to 85°C
K9F28XXQ0C : Vcc=1.7V~1.95V , K9F28XXU0C : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F28XXQ0C
Input Pulse Levels
0V to VccQ
Input Rise and Fall Times
5ns
Input and Output Timing Levels
VccQ/2
K9F28XXQ0C:Output Load (VccQ:1.8V +/-10%)
K9F28XXU0C:Output Load (VccQ:3.0V +/-10%)
1 TTL GATE and CL=30pF
K9F28XXU0C:Output Load (VccQ:3.3V +/-10%)
-
K9F28XXU0C
0.4V to 2.4V
5ns
1.5V
1 TTL GATE and CL=50pF
1 TTL GATE and CL=100pF
CAPACITANCE(TA=25°C, VCC=1.8V/3.3V, f=1.0MHz)
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
CI/O
VIL=0V
-
10 pF
Input Capacitance
CIN VIN=0V
-
10 pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE ALE CE WE RE GND WP
Mode
HL
LH
L
L
HXX
Command Input
Read Mode
HXX
Address Input(3clock)
HL
LH
L
L
HXH
Command Input
Write Mode
HXH
Address Input(3clock)
LL
L
H L H Data Input
LL
L
H
L X Data Output
LL
L
H
H L X During Read(Busy) on K9F2808U0C_Y,P or K9F2808U0C_V,F
XX
X
X
H
L
X
During Read(Busy) on the devices except K9F2808U0C_Y,P
and K9F2808U0C_V,F
XX
X
X
X L H During Program(Busy)
XX
X
X
X X H During Erase(Busy)
X X(1)
X
X
X X L Write Protect
XX
H
X
X 0V 0V/VCC(2) Stand-by
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
Program/Erase Characteristics
Parameter
Symbol
Min
Program Time
tPROG
-
Number of Partial Program Cycles
in the Same Page
Main Array
Spare Array
Nop
-
-
Block Erase Time
tBERS
-
Typ
200
-
-
2
Max
500
2
3
3
Unit
µs
cycles
cycles
ms
11
11 Page | ||
| Páginas | Total 33 Páginas | |
| PDF Descargar | [ Datasheet K9F2808U0C-VCB0.PDF ] | |
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