DataSheet.es    


Datasheet K9K1208U0M-YIB0 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1K9K1208U0M-YIB064M x 8 Bit NAND Flash Memory

K9K1208U0M-YCB0, K9K1208U0M-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - The followings are disprepancy items between K9K5608U0M (256Mb DDP) and K9K1208U0M (512Mb DDP). AC Characteristics Read Cycle Time (tRC) Write Cycl
Samsung semiconductor
Samsung semiconductor
data


K9K Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1K9K1208D0C64M x 8 Bit / 32M x 16 Bit NAND Flash Memory

K9F8008W0M-TCB0, K9F8008W0M-TIB0 Document Title 1M x 8 bit NAND Flash Memory FLASH MEMORY Revision History Revision No. 0.0 1.0 History Data Sheet 1997 Data Sheet 1998 1. Changed tBERS parameter : 5ms(Typ.) → 2ms(Typ.) 10ms(Max.) → 4ms(Max.) 2. Changed tPROG parameter : 1.5ms(Max.) → 1.0ms(
Samsung semiconductor
Samsung semiconductor
data
2K9K1208Q0C64M x 8 Bit / 32M x 16 Bit NAND Flash Memory

K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr
Samsung semiconductor
Samsung semiconductor
data
3K9K1208U0A-YCB064M x 8 Bit NAND Flash Memory

K9K1208U0A-YCB0, K9K1208U0A-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is
Samsung semiconductor
Samsung semiconductor
data
4K9K1208U0A-YCB064M x 8 Bit NAND Flash Memory

K9K1208U0A-YCB0, K9K1208U0A-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is
Samsung semiconductor
Samsung semiconductor
data
5K9K1208U0A-YCB064M x 8 Bit NAND Flash Memory

K9K1208U0A-YCB0, K9K1208U0A-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is
Samsung semiconductor
Samsung semiconductor
data
6K9K1208U0A-YIB064M x 8 Bit NAND Flash Memory

K9K1208U0A-YCB0, K9K1208U0A-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is
Samsung semiconductor
Samsung semiconductor
data
7K9K1208U0A-YIB064M x 8 Bit NAND Flash Memory

K9K1208U0A-YCB0, K9K1208U0A-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is
Samsung semiconductor
Samsung semiconductor
data



Esta página es del resultado de búsqueda del K9K1208U0M-YIB0. Si pulsa el resultado de búsqueda de K9K1208U0M-YIB0 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap