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K9K2G08Q0M-PIB0 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 K9K2G08Q0M-PIB0은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 K9K2G08Q0M-PIB0 자료 제공

부품번호 K9K2G08Q0M-PIB0 기능
기능 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


K9K2G08Q0M-PIB0 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



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K9K2G08Q0M-PIB0 데이터시트, 핀배열, 회로
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
Revision No History
0.0 1. Initial issue
0.1 1. IOL(R/B) of 1.8V device is changed.
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
Draft Date Remark
Sep. 19.2001 Advance
Nov. 5. 2001
0.2 1. 5th cycle of ID is changed
: 40h --> 44h
Jan. 23.2002
0.3 1. Add WSOP Package Dimensions.
May. 29.2002
0.4 1. Max Icc value of 1.8V/3.3V device is changed.
- Max. value Icc1,Icc2,Icc3: 20mA --> 30mA (3.3V device)
- Max. value Icc1,Icc2,Icc3: 15mA --> 20mA (1.8V device)
0.5 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 36)
The min. Vcc value 1.8V devices is changed.
0.6 K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
0.7 Pb-free Package is added.
K9K2G08U0M-FCB0,FIB0
K9K2G08Q0M-PCB0,PIB0
K9K2G08U0M-PCB0,PIB0
K9K2G16U0M-PCB0,PIB0
K9K2G16Q0M-PCB0,PIB0
0.8 Errata is added.(Front Page)-K9K2GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Specification 45 25 15 50 15 25 30 45
Relaxed value 80 60 20 60 80 60 60 75
1. The 3rd Byte ID after 90h ID read command is don’t cared.
0.9 The 5th Byte ID after 90h ID read command is deleted.
1.0 1. Added Addressing method for program operation
Sep. 12.2002
Nov. 22.2002
Mar. 6.2003
Mar. 13.2003
Mar. 17.2003
Apr. 9. 2003
Jan. 27. 2004
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1




K9K2G08Q0M-PIB0 pdf, 반도체, 판매, 대치품
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
PIN CONFIGURATION (TSOP1)
X16 X8
K9K2GXXX0M-YCB0,PCB0/YIB0,PIB0
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP1
Standard Type
12mm x 20mm
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
X8
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
PRE
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
X16
Vss
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
N.C
PRE
Vcc
N.C
N.C
N.C
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
Vss
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220AF
Unit :mm/Inch
20.00±0.20
0.787±0.008
#1 #48
#24
0~8°
0.45~0.75
0.018~0.030
18.40±0.10
0.724±0.004
#25
1.00±0.05
0.039±0.002
01..02407MAX
0.05
0.002
MIN
(
0.50
0.020
)
4

4페이지










K9K2G08Q0M-PIB0 전자부품, 판매, 대치품
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
Figure 1-1. K9K2G08X0M (X8) Functional Block Diagram
VCC
VSS
A12 - A28
X-Buffers
Latches
& Decoders
2048M + 64M Bit
NAND Flash
ARRAY
A0 - A11
Y-Buffers
Latches
& Decoders
Command
Command
Register
(2048 + 64)Byte x 131072
Data Register & S/A
Cache Register
Y-Gating
I/O Buffers & Latches
CE Control Logic
RE & High Voltage
WE Generator
Global Buffers
Output
Driver
CLE ALE PRE WP
VCC
VSS
I/0 0
I/0 7
Figure 2-1. K9K2G08X0M (X8) Array Organization
1 Block = 64 Pages
(128K + 4k) Byte
128K Pages
(=2,048 Blocks)
2K Bytes
64 Bytes
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 2048 Blocks
= 2112 Mbits
8 bit
Page Register
2K Bytes
I/O 0 ~ I/O 7
64 Bytes
I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6
1st Cycle
A0
A1
A2
A3
A4
A5
A6
2nd Cycle A8 A9 A10 A11 *L *L *L
3rd Cycle A12 A13 A14 A15 A16 A17 A18
4th Cycle A20 A21 A22 A23 A24 A25 A26
5th Cycle A28
*L
*L
*L
*L
*L
*L
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
I/O 7
A7
*L
A19
A27
*L
Column Address
Column Address
Row Address
Row Address
Row Address
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
K9K2G08Q0M-PIB0

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Samsung semiconductor
Samsung semiconductor

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