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SMBJ9.0 데이터시트 PDF




EIC discrete Semiconductors에서 제조한 전자 부품 SMBJ9.0은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 SMBJ9.0 기능
기능 TVS Diode, SMD (Transient Voltage Suppressor)
제조업체 EIC discrete Semiconductors
로고 EIC discrete Semiconductors 로고


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SMBJ9.0 데이터시트, 핀배열, 회로
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
SMBJ 5.0 - 170A
VBR : 6.8 - 200 Volts
PPK : 600 Watts
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
SMB (DO-214AA)
FEATURES :
* 600W surge capability at 1ms
* Excellent clamping capability
* Low inductance
* Response Time Typically < 1ns
* Typical IR less then 1µA above 10V
MECHANICAL DATA
* Case : SMB Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.108 gram
1.1 ? 0.3
2.0 ? 0.1
3.6 ? 0.15
2.3 ? 0.2
0.22 ? 0.07
Dimensions in millimeter
MAXIMUM RATINGS
Rating at Ta = 25 ?C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation on 10/1000µs (1)
waveform (Notes 1, 2, Fig. 3)
Peak Pulse Current on 10/1000µs
waveform (Note 1, Fig. 5)
Peak forward Surge Current
8.3 ms single half sine-wave superimposed on
rated load ( JEDEC Method )(Notes 2, 3)
Maximum Instantaneous Forward Voltage at 50A (Note 3,4 )
Operating Junction and Storage Temperature Range
Symbol
PPPM
IPPM
Value
Minimum 600
See Table
Units
Watts
Amps
VFM
TJ, TSTG
See Note 3, 4
- 65 to + 150
Volts
?C
Note :
(1) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25 ?C per Fig. 1
(2) Mounted on 5.0mm2 (0.013mm thick) land areas.
(3) Measured on 8.3ms. Single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum.
(4) VF=3.5V for SMBJ5.0 thru SMBJ90 devices and VF=5V for SMBJ100 thru SMBJ170 devices.
UPDATE : MAY 25, 2000




SMBJ9.0 pdf, 반도체, 판매, 대치품
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( SMBJ5.0 - SMBJ170A )
FIG.1 - PULSE DERATING CURVE
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Ta, AMBIENT TEMPERATURE, ( ?C)
FIG.3 - TYPICAL JUNCTION CAPACITANCE
6,000
1,000
VR Measured @
Zero Basic (0V)
VR Measured @
Stand-off
voltage
100
TJ = 25?C
f = 1.0 MHz
Vsig = 50 mVP-P
10
1
2
10 20
100 200
VR, REVERSE STAND OFF VOLTAGE,VOLTS
FIG.5 - PULSE WAVEFORM
tr ? 10µs
Ta=25 ?C
Pulse Width (tp) is defined
100
Peak Value
as that point where the peak
IPPM current decays to 50%
of IPPM
Half Value - IPPM
50 2
FIG.2 - MAXIMUM NON-REPETITIVE
PERK FORWARD SURGE CURRENT
TJ = TJmax
200 8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
100
50
10
12
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE PULSE
WAVEFORM SHOWN IN
FIG. 5 Ta=25?C
10
1.0
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
tp, PULSE WIDTH, SEC
10ms
td
0
0 1.0
2.0
t, TIME(ms)
3.0
4.0

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