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PDF SMBT2907A Data sheet ( Hoja de datos )
| Número de pieza | SMBT2907A | |
| Descripción | PNP Silicon Switching Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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PNP Silicon Switching Transistor
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type:
SMBT2222A/ MMBT2222A (NPN)
SMBT2907A/MMBT2907A
3
2
1 VPS05161
Type
Marking
SMBT2907A/MMBT2907A s2F
1=B
Pin Configuration
2=E 3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Total power dissipation, TS = 77 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
60
60
5
600
330
150
-65 ... 150
220
Unit
V
mA
mW
°C
K/W
1 Jun-12-2002
1 page  
SMBT2907A/MMBT2907A
Total power dissipation Ptot = f(TS)
Collector-base capacitance CCB = f (VCB)
f = 1MHz
360
mW
300
270
240
210
180
150
120
90
60
30
00 15 30 45 60 75 90 105 120 °C 150
TS
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10 2 SMBT 2907/A
pF
5
Ccb
10 1
5
EHP00747
10 0
10 -1
5 10 0
5 10 1 V 5 10 2
VCB
Transition frequency fT = f (IC)
VCE = 5V
10 3 SMBT 2907/A
Ptot max
Ptot DC
5
10 2
5
10 1
5
D = tp
T
tp
T
EHP00748
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 3 SMBT 2907/A
MHz
5
fT
10 2
5
EHP00749
10 0
10 -6
10 -5 10 -4 10 -3 10 -2
s
tp
10 1
10 0 10 0
5
5 10 1
5 10 2 mA 5 10 3
ΙC
Jun-12-2002
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SMBT2907A.PDF ] | |
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| SMBT2907A | PNP Silicon Switching Transistor | Infineon Technologies AG |
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