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PDF SMBT3904 Data sheet ( Hoja de datos )
| Número de pieza | SMBT3904 | |
| Descripción | NPN Silicon Switching Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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NPN Silicon Switching Transistor
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Complementary type: SMBT3906 (PNP)
SMBT3904/ MMBT3904
3
2
1 VPS05161
Type
Marking
Pin Configuration
SMBT3904/ MMBT3904 s1A
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Total power dissipation, TS = 69 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
Value
40
60
6
200
330
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
245
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
K/W
1 Feb-18-2002
1 page  
SMBT3904/ MMBT3904
Total power dissipation Ptot = f(TS)
Saturation voltage IC = f (VBEsat, VCEsat)
hFE = 10
360
mW
300
270
240
210
180
150
120
90
60
30
00 15 30 45 60 75 90 105 120 °C 150
TS
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10 3
Ptot max
Ptot DC
10 2
5
10 1
5
EHP00935
D = tp
T
tp
T
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2
mA
Ι C 10 2
5
10 1
5
V CE
EHP00756
V BE
10 0
0
0.2 0.4 0.6 0.8 1.0 V 1.2
VBE sat , VCE sat
DC current gain hFE = f (IC)
VCE = 10V, normalized
10 1
h FE 5
EHP00765
125 C
10 0 25 C
-55 C
5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
10 -1
10 -1
5
5 10 0
5 10 1
mA 10 2 2
ΙC
Feb-18-2002
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SMBT3904.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SMBT3904 | NPN Silicon Switching Transistor |  Siemens Semiconductor Group |
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| SMBT3904PN | NPN/PNP Silicon Switching Transistor Array | Infineon Technologies AG |
| SMBT3904S | NPN Silicon Switching Transistor Array | Siemens Semiconductor Group |
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