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SMBT3904S PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SMBT3904S
기능 NPN Silicon Switching Transistor Array
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SMBT3904S 데이터시트, 핀배열, 회로
SMBT3904S
NPN Silicon Switching Transistor Array
 High DC current gain: 0.1mA to 100mA
 Low collector-emitter saturation voltage
 Two ( galvanic) internal isolated Transistors
with good matching in one package
 Complementary type: SMBT3906S (PNP)
C1 B2 E2
654
4
5
6
3
2
1
VPS05604
TR2
TR1
Type
SMBT3904S
Marking
s1A
123
E1 B1 C2
EHA07178
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
40
60
6
200
250
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
140
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
K/W
1 Nov-30-2001




SMBT3904S pdf, 반도체, 판매, 대치품
Test circuit
Delay and rise time
300 ns
D = 2%
+10.9 V
10 k
0
-0.5 V
<1.0 ns
+3.0 V
275
C
<4.0 pF
EHN00061
Storage time and fall time
10 < t1< 500 µs
t 1 D = 2%
+10.9 V
0
-9.1 V
<1.0 ns
10 k
1N916
+3.0 V
275
C
<4.0 pF
EHN00062
SMBT3904S
4 Nov-30-2001

4페이지










SMBT3904S 전자부품, 판매, 대치품
SMBT3904S
Delay time td = f (IC)
Rise time tr = f (IC)
10 3
ns
tr ,td
10 2
tr
td
10 1
Storage time tstg = f(IC)
EHP00761
h FE = 10
VCC = 3 V
40 V
15 V
V BE = 2 V
0V
10 3
ns
ts
10 2
10 1
EHP00762
25 C
125 C
h FE= 20
10
h FE= 20
10
10 0
10 0
5 10 1
Fall time tf = f (IC)
5 10 2
mA 10 3
ΙC
10 0
10 0
5 10 1
Rise time tr = f (IC)
5 10 2
mA 10 3
ΙC
10 3
ns
tf
10 2
10 1
EHP00763
25 C
125 C
VCC = 40 V
h FE = 20
h FE = 10
10 3
ns
tr
25 C
10 2 125 C
10 1
EHP00764
VCC = 40 V
h FE = 10
10 0
10 0
5 10 1
5 10 2
mA 10 3
ΙC
10 0
10 0
7
5 10 1
5 10 2
mA 10 3
ΙC
Nov-30-2001

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NPN Silicon Switching Transistor

Siemens Semiconductor Group
Siemens Semiconductor Group
SMBT3904

NPN Silicon Switching Transistor

Infineon Technologies AG
Infineon Technologies AG

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